2N6428A NPN Epitaxial Silicon Transistor
December 2006
2N6428A
NPN Epitaxial Silicon Transistor
Features
• This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA.
tm
TO92
1 23
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC PD TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature Range
Ta = 25°C unless otherwise noted
Parameter
Value
60 50 5 200 625 150 - 55 ~ 150
Unit
V V V mA mW °C °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics*
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE
TC = 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Conditions
IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VBE = 5V, IC = 0 VCE = 5V, IC = 0.01mA VCE = 5V, IC = 0.1mA VCE = 5V, IC = 1.0mA VCE = 5V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5V, IC = 1.0mA IC = 1mA, VCE = 5.0V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz
Min.
60 50 5
Max.
Units
V V V
10 10 250 250 250 250 0.2 0.6 0.56 100 0.66 700 3 650 650
nA nA
VCE (sat) VBE (on) fT Cob
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
V V V MHz pF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
2N6428A Rev. A
2N6428A NPN Epitaxial Silicon Transistor
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
2 2N6428A Rev. A
www.fairchildsemi.com
2N6428A NPN Epitaxial Silicon Transistor 2N6428A NPN Epitaxial Silicon Transistor
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
3 2N6428A Rev. A
www.fairchildsemi.com
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