2N7002MTF

2N7002MTF

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    2N7002MTF - N-Channel Small Signal MOSFET - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
2N7002MTF 数据手册
N-Channel Small Signal MOSFET FEATURES ! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability 2N7002MTF BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA SOT-23 Product Summary Part Number 2N7002 BVDSS 60V RDS(on) 5.0Ω ID 115mA 1.Gate 2. Source 3. Drain Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range ① Value 60 115 73 800 ±20 0.2 1.6 - 55 to +150 Units V mA mA V W mW/℃ ℃ Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ. -Max. 625 Units ℃/W Rev. C1 2N7002MTF Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.2 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A Ω S Typ. - N-Channel Small Signal MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Max. Units 2.5 100 nA -100 1.0 µA V V Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125℃ VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz Forward Transconductance ② Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 30V, ID = 0.2A RG = 25Ω ②③ Source-Drain Diode Ratings and Characteristics Symbol IS ISD VSD Characteristic Continuous Source Current Pulse Source Current Diode Forward Voltage ① ② Min. Typ. Max. Units 115 800 1.5 mA mA V Test Condition Integral reverse pn-diode In the MOSFET TA = 25 ℃, IS = 115mA VGS = 0V Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature N-Channel Small Signal MOSFET 2N7002MTF 2N7002MTF N-Channel Small Signal MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11
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