2N7002W

2N7002W — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D S G SOT - 323 Marking : 2N Absolute Maximum Ratings * Symbol VDSS VDGR VGSS ID Drain-Source Voltage Ta = 25°C unless otherwise noted Parameter Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current Continuous Pulsed Continuous Continuous @ 100°C Pulsed Value 60 60 ±20 ±40 115 73 800 -55 to +150 Units V V V mA °C TJ , TSTG Junction and Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol PD RθJA Parameter Total Device Dissipation Derating above TA = 25°C Thermal Resistance, Junction to Ambient * Value 200 1.6 625 Units mW mW/°C °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size, © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 1 www.fairchildsemi.com 2N7002W — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Symbol Parameter Off Characteristics (Note1) BVDSS IDSS IGSS TC = 25°C unless otherwise noted Test Condition MIN TYP MAX Units Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage VGS= 0V, ID=10uA VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125°C VGS= ±20V, VDS= 0V 60 - 78 0.001 7 0.2 1.0 500 ±10 V uA nA On Characteristics (Note1) VGS(th) RDS(ON) ID(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 0.5 80 1.76 1.6 2.53 1.43 356.5 2.0 7.5 13.5 V Ω A mS Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, @Tj = 125°C On-State Drain Current Forward Transconductance VGS = 10V, VDS= 7.5V VDS = 10V, ID = 0.2A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 37.8 12.4 6.5 50 25 7.0 pF pF pF Switching Characteristics tD(ON) tD(OFF) Turn-On Delay Time Turn-Off Delay Time VDD = 30V, ID = 0.2A, VGEN= 10V RL = 150Ω, RGEN = 25Ω 5.85 12.5 20 20 ns Note1 : Short duration test pulse used to minimize self-heating effect. © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 2 www.fairchildsemi.com 2N7002W — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 1. On-Region Characteristics 1.6 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 ID. DRAIN-SOURCE CURRENT(A) RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VGS = 10V 5V VGS = 3V 4V 4.5V 5V 6V 2.5 4V 2.0 10V 1.5 3V 9V 8V 7V 2V 0.0 0 1 2 3 4 5 6 7 8 9 10 1.0 0.0 0.2 0.4 0.6 0.8 1.0 VDS. DRAIN-SOURCE VOLTAGE (V) ID. DRAIN-SOURCE CURRENT(A) Figure 3. On-Resistance Variation with Temperature 3.0 Figure 4. On-Resistance Variation with Gate-Source Voltage 3.0 RDS(on) (Ω) DRANI-SOURCE ON-RESISTANCE 2.5 VGS = 10V ID = 500 mA RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE 2.5 2.0 ID = 500 mA 2.0 1.5 ID = 50 mA 1.5 1.0 0.5 -50 1.0 0 50 100 o 150 2 4 6 8 10 TJ. JUNCTION TEMPERATURE( C) VGS. GATE-SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 1.0 o Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) 2.5 ID. DRAIN-SOURCE CURRENT(A) VDS = 10V 0.8 TJ = -25 C 150 C 25 C 125 C o o o VGS = VDS 2.0 0.6 ID = 1 mA ID = 0.25 mA 1.5 75 C 0.4 o 0.2 0.0 2 3 4 5 6 1.0 -50 0 50 100 o 150 VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 3 www.fairchildsemi.com 2N7002W — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature VGS = 0 V Figure 8. Power Derating 280 IS Reverse Drain Current, [mA] 100 PC[mW], POWER DISSIPATION 150 C o 240 200 160 25 C 10 o 120 -55 C o 80 40 1 0.0 0.2 0.4 0.6 0.8 1.0 0 0 25 o 50 75 100 125 150 175 VSD, Body Diode Forward Voltage [V] Ta[ C], AMBIENT TEMPERATURE © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 4 www.fairchildsemi.com 2N7002W — N-Channel Enhancement Mode Field Effect Transistor Package Dimensions SOT323 © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 5 www.fairchildsemi.com 2N7002W 2N7002W N-Channel Enhancement Mode Field Effect Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N7002W Rev. A 6 www.fairchildsemi.com