2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
March 2008
2SA1381/KSA1381 PNP Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier
Features
• • • • • • High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SC3503/KSC3503
1
TO-126 2.Collector 3.Base
1. Emitter
Absolute Maximum Ratings*
Symbol
BVCBO BVCEO BVEBO IC ICP PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse)
Ta = 25°C unless otherwise noted
Parameter
Ratings
-300 -300 -5 -100 -200 7 1.2 - 55 ~ +150
Units
V V V mA mA W W °C
Total Device Dissipation, TC=25°C TC=125°C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
* Device mounted on minimum pad size
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
17.8
Units
°C/W
hFE Classification
Classification
hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 1
www.fairchildsemi.com
2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre
Parameter
Collector-Base Breakdown Voltage Collecto- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance
Test Condition
IC = - 10µA, IE = 0 IC = - 1mA, IB = 0 IE = - 10µA, IC = 0 VCB = - 200V, IE = 0 VEB = - 4V, IC = 0 VCE = - 10V, IC = - 10mA IC = - 20mA, IB = - 2mA IC = - 20mA, IB = - 2mA VCE = - 30V, IC = - 10mA VCB = - 30V, f = 1MHz VCB = - 30V, f = 1MHz
Min.
- 300 - 300 -5
Typ.
Max.
Units
V V V
- 0.1 - 0.1 40 320 - 0.6 -1 150 3.1 2.3
µA µA
V V MHz pF pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Ordering Information
Part Number*
2SA1381CSTU 2SA1381DSTU 2SA1381ESTU 2SA1381FSTU KSA1381CSTU KSA1381DSTU KSA1381ESTU KSA1381FSTU
Marking
2SA1381C 2SA1381D 2SA1381E 2SA1381F A1381C A1381D A1381E A1381F
Package
TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
Packing Method
TUBE TUBE TUBE TUBE TUBE TUBE TUBE TUBE
Remarks
hFE1 C grade hFE1 D grade hFE1 E grade hFE1 F grade hFE1 C grade hFE1 D grade hFE1 E grade hFE1 F grade
* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 2
www.fairchildsemi.com
2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
Typical Characteristics
-20
IB = -140µA IB = -120µA
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
-16
IB = -60µA IB = -50µA
-8
IB = -100µA
-12
IB = -80µA
IB = -60µA
IB = -40µA
-6
IB = -30µA
-4
-8
IB = -40µA
-4
IB = -20µA IB = -10µA IB = 0µA
IB = -20µA IB = 0µA
-0 -2 -4 -6 -8 -10
-2
-0
-0 -0 -20 -40 -60 -80 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1k
-10
VCE = -10V
IC = 10 IB
hFE, DC CURRENT GAIN
-1
VBE(sat)
100
-0.1
VCE(sat)
10 -0.1
-1
-10
-100
-0.01 -0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT
1000
-160
VCE = -30V
-140
VCE = -10V
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-120 -100 -80 -60 -40 -20 -0 -0.0
100
10
1 -0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Base-Emitter On Voltage
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 3
www.fairchildsemi.com
2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
Typical Characteristics (Continued)
100
100
IE=0 f=1MHz
f=1MHz
Cob[pF], CAPACITANCE
10
Cre[pF], CAPACITANCE
-1 -10 -100 -1000
10
1
1
0.1 -0.1
0.1 -0.1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 7. Collector Output Capacitance
Figure 8. Reverse Transfer Capacitance
1000
8 7
IC[mA], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
IC MAX. (Pulse)
0 50
6 5 4 3 2 1 0 0 25 50
o
IC MAX.
100
µs
DC (T
D C
Tc=25 C
o
c
=
(T a
25
=
1ms 10ms
o
C)
25
C
o
10
)
TC=125 C
o
1 1 10 100 1000
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
T[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 4
www.fairchildsemi.com
2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor
Package Dimensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10
±0.30
(0.50) 1.75 ±0.20
0.75 ±0.10
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 –0.05
+0.10
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 5
www.fairchildsemi.com
2SA1381/KSA1381 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
© 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 6
www.fairchildsemi.com