2SA1943

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor March 2008 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5200/FJL4315. Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts 1 TO-264 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -230 -230 -5 -15 -1.5 150 1.04 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 0.83 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 1 www.fairchildsemi.com 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted a Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=-5mA, IE=0 IC=-10mA, RBE=∞ IE=-5mA, IC=0 VCB=-230V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-7A IC=-8A, IB=-0.8A VCE=-5V, IC=-7A VCE=-5V, IC=-1A VCB=-10V, f=1MHz Min. -230 -230 -5 Typ. Max. Units V V V -5.0 -5.0 55 35 60 -0.4 -1.0 30 360 -3.0 -1.5 160 µA µA V V MHz pF * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number 2SA1943RTU 2SA1943OTU FJL4215RTU FJL4215OTU Marking A1943R A1943O J4215R J4215O Package TO-264 TO-264 TO-264 TO-264 Packing Method TUBE TUBE TUBE TUBE Remarks hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 2 www.fairchildsemi.com 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Typical Characteristics -20 -18 IB = -1A IB = -900mA IB = -800mA IB = -700mA IB = -600mA IB = -500mA A IB = -400m IB = -300mA IB = -200mA IB = -100mA Tj = 125 C o IC[mA], COLLECTOR CURRENT Tj = 25 C o VCE = -5V -16 -14 -12 -10 -8 -6 -4 -2 hFE, DC CURRENT GAIN 100 o Tj = -25 C 10 1 -0 -2 -4 -6 -8 -10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10000 10000 Ic=-10Ib Vbe(sat)[mV], SATURATION VOLTAGE Vce(sat)[mV], SATURATION VOLTAGE Ic=-10Ib 1000 Tj=-25 C 1000 o Tj=25 C o Tj=125 C 100 o Tj=25 C o Tj=125 C o Tj=-25 C o 100 0.1 1 10 10 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 14 Transient Thermal Resistance, Rthjc[ C / W] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 12 IC[A], COLLECTOR CURRENT V CE = 5 V 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V BE [V], BASE-EMITTER VOLTAGE o Pulse duration [sec] Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 3 www.fairchildsemi.com 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Typical Characteristics -100 160 IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT 140 10ms* -10 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 o IC MAX. (DC) 100ms* DC -1 -0.1 *SINGLE NONREPETITIVE PULSE TC=25[ C] -0.01 1 10 100 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating Figure 8. Safe Operating Area © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 4 www.fairchildsemi.com 2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor Package Dimensions TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 2 (R .00 0 ø3.3 ±0.2 .00 ) 0 ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 5 www.fairchildsemi.com 2SA1943/FJL4215 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation 2SA1943/FJL4215 Rev. A2 6 www.fairchildsemi.com