2SC5200

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor March 2008 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts 1 TO-264 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Ta = 25°C unless otherwise noted Parameter Ratings 230 230 5 15 1.5 150 1.04 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 0.83 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 1 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted a Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz Min. 230 230 5 Typ. Max. Units V V V 5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160 µA µA V V MHz pF * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number 2SC5200RTU 2SC5200OTU FJL4315RTU FJL4315OTU Marking C5200R C5200O J4315R J4315O Package TO-264 TO-264 TO-264 TO-264 Packing Method TUBE TUBE TUBE TUBE Remarks hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 2 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA 14 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 12 10 8 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA Tj=125 C o Tj=25 C o Vce=5V 100 Tj=-25 C o 6 IB = 40mA 4 2 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10000 10000 Vbe(sat)[mV], SATURATION VOLTAGE Vce(sat)[mV], SATURATION VOLTAGE Ic=10Ib Ic=10Ib 1000 Tj=-25 C 1000 o Tj=25 C o Tj=25? 100 Tj=125? Tj=125 C o Tj=-25? 10 100 0.1 1 10 1 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage VCE = 5V 10 Transient Thermal Resistance, Rthjc[ C / W] 12 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o VBE[V], BASE-EMITTER VOLTAGE Pulse duration [sec] Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 3 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Typical Characteristics 100 160 IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT 140 10ms* 10 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 o IC MAX. (DC) 100ms* DC 1 0.1 *SINGLE NONREPETITIVE PULSE TC=25[ C] 0.01 1 10 100 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating Figure 8. Safe Operating Area © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 4 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Package Dimensions TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 2 (R .00 0 ø3.3 ±0.2 .00 ) 0 ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 5 www.fairchildsemi.com 2SC5200/FJL4315 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. A2 6 www.fairchildsemi.com