2SC5242OTU

2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor July 2008 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1962/FJA4213. Thermal and electrical Spice models are available Same transistor is also available in: --TO264 package, 2SC5200/FJL4315 : 150 watts --TO220 package, FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Ta = 25°C unless otherwise noted Parameter Ratings 230 230 5 15 1.5 130 1.04 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 0.96 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 1 www.fairchildsemi.com 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted a Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz Min. 230 230 5 Typ. Max. Units V V V 5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160 µA µA V V MHz pF * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number 2SC5242RTU 2SC5242OTU FJA4313RTU FJA4313OTU Marking C5242R C5242O J4313R J4313O Package TO-3P TO-3P TO-3P TO-3P Packing Method TUBE TUBE TUBE TUBE Remarks hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 2 www.fairchildsemi.com 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA 14 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 12 10 8 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA Tj=125 C o Tj=25 C o Vce=5V 100 Tj=-25 C o 6 IB = 40mA 4 2 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10000 10000 Vbe(sat)[mV], SATURATION VOLTAGE Vce(sat)[mV], SATURATION VOLTAGE Ic=10Ib Ic=10Ib 1000 Tj=-25 C 1000 o Tj=25 C o Tj=25? 100 Tj=125? Tj=125 C o Tj=-25? 10 100 0.1 1 10 1 0.1 1 10 Ic[A], COLLECTOR CURRENT Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage VCE = 5V 10 Transient Thermal Resistance, Rthjc[ C / W] 12 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o VBE[V], BASE-EMITTER VOLTAGE Pulse duration [sec] Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 3 www.fairchildsemi.com 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Typical Characteristics -100 160 IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT 140 10ms* -10 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 o IC MAX. (DC) 100ms* DC -1 -0.1 *SINGLE NONREPETITIVE PULSE TC=25[ C] -0.01 1 10 100 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating Figure 8. Safe Operating Area © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 4 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Package Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 5 2SC5242/FJA4313 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 6