4N25M_09

4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers January 2009 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Volume 2) ■ VDE recognized (File # 102497) Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. – Add option V (e.g., 4N25VM) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Schematic 1 6 Package Outlines 2 5 3 NC 4 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR VCEO VCBO VECO PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Storage Temperature Operating Temperature Parameter Value -40 to +150 -40 to +100 260 for 10 sec 250 2.94 60 6 3 120 1.41 30 70 7 150 1.76 Units °C °C °C mW Wave solder temperature (see page 8 for reflow solder profile) Total Device Power Dissipation @ TA = 25°C Derate above 25°C DC/Average Forward Input Current Reverse Input Voltage Forward Current – Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C mA V A mW mW/°C V V V mW mW/°C Detector Power Dissipation @ TA = 25°C Derate above 25°C Electrical Characteristics (TA = 25°C unless otherwise specified) Individual Component Characteristics Symbol EMITTER VF IR DETECTOR BVCEO BVCBO BVECO ICEO ICBO CCE Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10V, IF = 0 VCB = 10V VCE = 0V, f = 1 MHz 8 30 70 7 100 120 10 1 50 20 V V V nA nA pF Input Forward Voltage Reverse Leakage Current IF = 10mA VR = 6.0V 1.18 0.001 1.50 10 V µA Parameter Test Conditions Min. Typ.* Max. Unit Isolation Characteristics Symbol VISO RISO CISO Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f = 60Hz, t = 1 sec VI-O = 500 VDC VI-O = &, f = 1MHz Min. 7500 1011 Typ.* Max. Units Vac(pk) Ω 0.2 2 pF *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 2 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified) Transfer Characteristics Symbol CTR Parameter Current Transfer Ratio, Collector to Emitter Test Conditions IF = 10mA, VCE = 10V Device 4N35M, 4N36M, 4N37M H11A1M H11A5M 4N25M, 4N26M H11A2M, H11A3M 4N27M, 4N28M H11A4M Min. Typ.* Max. 100 50 30 20 10 40 40 0.5 0.3 0.4 Unit % DC CHARACTERISTICS IF = 10mA, VCE = 10V, TA = -55°C IF = 10mA, VCE = 10V, TA = +100°C VCE (SAT) Collector-Emitter Saturation Voltage IC = 2mA, IF = 50mA IC = 0.5mA, IF = 10mA 4N35M, 4N36M, 4N37M 4N35M, 4N36M, 4N37M 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M H11A1M, H11A2M, H11A3M, H11A4M, H11A5M V AC CHARACTERISTICS TON Non-Saturated Turn-on Time IF = 10mA, VCC = 10V, RL = 100Ω (Fig. 11) 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4, H11A5M 4N35M, 4N36M, 4N37M 4N25M, 4N26M, 4N27M, 4N28M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M 4N35M, 4N36M, 4N37M 2 µs IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) TOFF Turn-off Time IF = 10mA, VCC = 10V, RL = 100Ω (Fig. 11) 2 2 10 µs µs IC = 2mA, VCC = 10V, RL = 100Ω (Fig. 11) * Typical values at TA = 25°C 2 10 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 3 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.6 VCE = 5.0V TA = 25°C Normalized to IF = 10 mA Fig. 2 Normalized CTR vs. Forward Current 1.7 1.4 VF - FORWARD VOLTAGE (V) 1.6 1.2 1.5 NORMALIZED CTR 100 1.0 1.4 TA = -55°C 0.8 1.3 TA = 25°C 1.2 TA = 100°C 1.1 0.6 0.4 0.2 1.0 1 10 0.0 0 2 4 6 8 10 12 14 16 18 20 IF - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 1.0 Fig. 4 CTR vs. RBE (Unsaturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 0.9 IF = 20 mA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 IF = 10 mA IF = 5 mA 1.2 IF = 5 mA NORMALIZED CTR 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.4 Normalized to IF = 10 mA TA = 25°C -40 -20 0 20 40 60 80 100 0.2 -60 10 100 1000 TA - AMBIENT TEMPERATURE (°C) RBE- BASE RESISTANCE (kΩ) Fig. 5 CTR vs. RBE (Saturated) 1.0 Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current 100 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 0.9 VCE= 0.3 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IF = 5 mA IF = 10 mA VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 25˚C 10 IF = 20 mA 1 IF = 10 mA IF = 2.5 mA 0.1 IF = 5 mA 0.01 IF = 20 mA 0.0 10 100 1000 0.001 0.01 0.1 1 10 RBE- BASE RESISTANCE (k Ω) IC - COLLECTOR CURRENT (mA) ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 4 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Typical Performance Curves (Continued) Fig. 7 Switching Speed vs. Load Resistor 1000 IF = 10 mA VCC = 10 V TA = 25°C 100 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100 Ω Fig. 8 Normalized ton vs. RBE 10 Toff Tf Ton 1 Tr 0.1 0.1 1 10 100 R-LOAD RESISTOR (kΩ) NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (µs) RBE- BASE RESISTANCE (k Ω) Fig. 9 Normalized toff vs. RBE 1.4 1.3 Fig. 10 Dark Current vs. Ambient Temperature ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 10000 VCE = 10 V TA = 25°C NORMALIZED toff - (toff(RBE) / toff(open)) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100 Ω 1000 100 10 1 0.1 0.01 0.001 0 20 40 60 80 100 RBE- BASE RESISTANCE (k Ω) TA - AMBIENT TEMPERATURE (°C) TEST CIRCUIT VCC = 10V WAVE FORMS INPUT PULSE IF INPUT RBE IC RL 10% 90% tr ton Adjust IF to produce IC = 2 mA tf toff OUTPUT PULSE OUTPUT Figure 11. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 5 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Package Dimensions Through Hole 8.13–8.89 6 4 6 0.4" Lead Spacing 8.13–8.89 4 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 3.28–3.53 0.25–0.36 1 3 7.62 (Typ.) 5.08 (Max.) 3.28–3.53 0.25–0.36 0.38 (Min.) 2.54–3.81 0.38 (Min.) 0.20–0.30 2.54–3.81 (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 2.54 (Bsc) 15° (Typ.) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 10.16–10.80 2.54 (Bsc) 0.20–0.30 Surface Mount 8.13–8.89 6 4 (1.78) (1.52) (2.54) 6.10–6.60 8.43–9.90 (7.49) (10.54) 1 3 Pin 1 (0.76) Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.76–1.14 0.16–0.88 (8.13) 0.20–0.30 Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 6 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Ordering Information Option No option S SR2 T V TV SV SR2V Order Entry Identifier (Example) 4N25M 4N25SM 4N25SR2M 4N25TM 4N25VM 4N25TVM 4N25SVM 4N25SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel Marking Information 1 4N25 V 3 4 2 6 X YY Q 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code, e.g., ‘7’ Two digit work week ranging from ‘01’ to ‘53’ Assembly package code *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 7 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers Carrier Tape Specification 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 0.30 ± 0.05 4.0 ± 0.1 Ø1.5 MIN 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 24.0 ± 0.3 0.1 MAX 10.1 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 Time above 183°C = 90 Sec 260°C >245°C = 42 Sec °C 160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822°C/Sec Ramp up rate 270 360 Time (s) ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 8 4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 www.fairchildsemi.com 9