5H0365R

www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features • • • • • • • • • Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter TO-220F-4L 8-DIP Applications • SMPS for VCR, SVR, STB, DVD & DVCD • SMPS for Printer, Facsimile & Scanner • Adaptor for Camcorder 1 1. GND 2. Drain 3. VCC 4. FB 1.6.7.8 Drain 2. GND 3. VCC 4. FB 5. NC Internal Block Diagram #3 VCC 32V 5V Vref Good logic OSC 9V 5µA 1mA − 2.5R 1R + 7.5V − + 27V − Thermal S/D OVER VOLTAGE S/D + S R L.E.B 0.1V S R Q Q Internal bias #2 DRAIN SFET (*#3 VCC) (*#1.6.7.8 DRAIN) #4 FB (*#4 FB) #1 GND Power on reset (*#2 GND) *Asterisk - KA5M0365RN, KA5L0365RN Rev.1.0.5 ©2002 Fairchild Semiconductor Corporation KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic KA5H0365R, KA5M0365R, KA5L0365R Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Symbol VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG Value 650 650 ±30 12.0 3.0 2.4 358 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150 800 800 ±30 12.0 3.0 2.1 95 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC mJ V V W W/°C °C °C °C V V V ADC ADC ADC mJ V V W W/°C °C °C °C Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. (2) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 2 KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic KA5M0365RN, KA5L0365RN Maximum Drain Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Symbol VD,MAX VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG Value 650 650 ±30 12.0 0.42 0.28 127 30 -0.3 to VSD 1.56 0.0125 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC mJ V V W W/°C °C °C °C Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 3 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter KA5H0365R, KA5M0365R, KA5L0365R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. 1 S = --R (Note) (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) Min. 650 2.0 - Typ. 3.6 720 40 40 150 100 150 42 7.3 13.3 Max. 50 200 4.5 34 - Unit V µA µA Ω S pF nS nC BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 800 1.5 - 4.0 2.5 779 75.6 24.9 40 95 150 60 7.2 12.1 250 1000 5.0 34 - V µA µA Ω S pF nS nC 4 KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter KA5M0365RN, KA5L0365RN Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. 1 S = --R (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) Min. 650 2.0 - Typ. 3.6 314.9 47 9 11.2 34 28.2 32 Max. 50 200 4.5 11.93 Unit V µA µA Ω S pF nS - 1.95 6.85 - nC 5 KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Initial Accuracy FOSC FOSC KA5H0365R KA5H0380R KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R -25°C≤Ta≤+85°C KA5H0365R KA5H0380R KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R Ta=25°C, 0V24V VCC=14V VCC