5S1265

www.fairchildsemi.com KA5S-SERIES KA5S0765C/KA5S0965/KA5S12656/KA5S1265 Fairchild Power Switch(FPS) Features • • • • • • • • • • • • • Wide Operating Frequency Range Up to 150kHz Lowest Cost SMPS Solution Lowest External Components Low Start-up Current (Max:170µA) Low Operating Current (Max:12mA) Internal High Voltage SenseFET Over Voltage Protection With Latch Mode (Min23V) Over Load Protection With Latch Mode Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Under Voltage Lockout With Hysteresis External Sync. Terminal TO-220-5L 1 TO-3P-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram VCC 3 VCC UVLO + 15/9V Soft Start & Sync 5 VREF Feedback 4 0.95mA 4µA OLP (Vfb=7.5V) TSD (Tj=160°C) OVP (VCC=25V) 1µs Window Open Circuit OCP (VS=1.1V) 2.5V R VREF VCC Vth.sy + 7V 6V + Voffset R S Q Bias Vref 2.5V OSC CLK + VREF UVLO Drain 1 SenseFET VS S Q R Shutdown Latch Rsense 2 GND Power-on Reset (VCC=6.5V) Rev.1.0.5 ©2003 Fairchild Semiconductor Corporation KA5S-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic KA5S0765C Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Symbol VDGR VGS IDM ID ID (2) Value 650 ±30 28 7.0 5.6 27(570) 30 -0.3 to VCC -0.3 to 8 140 1.11 +160 -25 to +85 -55 to +150 Unit V V ADC ADC ADC A(mJ) V V V W W/°C °C °C °C Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current (Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5S0965 Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed(1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(3)(Energy (2)) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. (3) ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG VDGR VGS IDM ID ID IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG 650 ±30 36 9.0 5.8 25(950) 30 -0.3 to VCC -0.3 to 8 170 1.33 +160 -25 to +85 -55 to +150 V V ADC ADC ADC A(mJ) V V V W W/°C °C °C °C 2 KA5S-SERIES Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Characteristic KA5S12656 Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Symbol VDGR VGS IDM ID ID (2) Value 650 ±30 48 12 8.4 25(785) 30 -0.3 to VCC -0.3 to 8 160 1.28 +160 -25 to +85 -55 to +150 Unit V V ADC ADC ADC A(mJ) V V V W W/°C °C °C °C Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current (Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5S1265 Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed(1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(3)(Energy (2)) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. (3) ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG VDGR VGS IDM ID ID IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Darting TJ TA TSTG 650 ±30 48 12 8.4 42(785) 30 -0.3 to VCC -0.3 to 8 160 1.28 +160 -25 to +85 -55 to +150 V V ADC ADC ADC A(mJ) V V V W W/°C °C °C °C Note: 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, VDD =50V, RG = 27Ω, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 3 KA5S-SERIES Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter KA5S0765C Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance(1) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5S0965 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance(1) Forward Transconductance(1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5B VDSS, ID=9.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) VGS=0V, VDS=25V, f = 1MHz VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.5A VDS=50V, ID=4.5A 650 5.0 0.96 1750 190 78 20 23 85 30 74 12 35 50 200 1.2 50 55 180 70 95 nC nS pF V µA µA Ω S (1) Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.0A VDS=15V, ID=4.0A VGS=0V, VDS=25V, f = 1MHz VDD=0.5B VDSS, ID=7.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) Min. 650 3.0 - Typ. 1.25 1600 310 120 25 55 80 50 9.3 29.3 Max. 50 200 1.6 72 - Unit V µA µA Ω S pF nS nC 4 KA5S-SERIES Electrical Characteristics (SFET Part) (Continued) (Ta = 25°C unless otherwise specified) Parameter KA5S12656 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance(1) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5S1265 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance(1) Forward Transconductance(1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) VGS=0V, VDS=25V, f = 1MHz VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=6.0A VDS=50V, ID=4.0A 650 5.7 0.72 2700 300 61 18 37 88 36 20 69 50 200 0.9 140 nC nS pF V µA µA Ω S (1) Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=6.0A VDS=50V, ID=4.0A VGS=0V, VDS=25V, f = 1MHz VDD=0.5B VDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) Min. 650 5.7 - Typ. 0.72 2700 300 61 18 37 88 36 20 69 Max. 50 200 0.9 140 - Unit V µA µA Ω S pF nS nC Note: 1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2% 2.MOSFET switching time is essentially independent of operating temperature 1 3. S = --R 5 KA5S-SERIES Electrical Characteristics (Control Part) (Continued) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (Note2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage Softstart Current Sync High Threshold Voltage(Note3) Sync Low Threshold Voltage(Note3) VSS ISS VSYNCH VSYNCL VFB=2V VSS=0V VCC=16V , VFB=5V VCC=16V , VFB=5V KA5S0765C Peak Current Limit (Note4) IOVER KA5S0965 KA5S12656 KA5S1265 PROTECTION SECTION Over Voltage Protection Over Current Latch voltage(Note3) Thermal Shutdown Tempature(Note2) TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART IOP IOP(MIN) IOP(MAX) VFB=GND, VCC=14V VFB=GND, VCC=16V VFB=GND, VCC=12V VFB=GND, VCC=30V 7 12 mA 0.1 0.17 mA VOVP VOCL TSD VCC ≥ 24V 23 0.9 140 25 1.0 160 28 1.1 V V °C 4.7 0.75 3.52 5.28 5.28 7.04 5.0 0.95 7.0 6.0 4.0 6.0 6.0 8.0 5.3 1.15 4.48 6.72 6.72 8.96 A V mA V V IFB VSD IDELAY VFB=GND VFB ≥ 6.9V VFB=5V 0.7 6.9 3.0 0.9 7.5 4.0 1.1 8.1 5.0 mA V FOSC FSTABLE ∆FOSC DMAX DMIN 12V ≤ VCC ≤ 23V -25°C ≤ Τa≤ 85°C 18 0 0 92 20 1 ±5 95 22 3 ±10 98 0 kHz % % % % VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 V V Symbol Conditions Min. Typ. Max. Unit µA CURRENT LIMIT(SELF-PROTECTION)SECTION Note: 1. These parameters are the current flowing in the control IC. 2. These parameters, although guaranteed, are not 100% tested in mass production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor current. 6 KA5S-SERIES Typical Performance Characteristics Istart(mA) Iop(mA) 0.12 0.09 0.06 0.03 0.00 12.0 10.0 8.0 6.0 4.0 -25 0 25 50 75 100 125 150 Temp(℃) -25 0 25 50 75 100 125 150 Temp(℃) Figure 1. Start Up Current vs. Temp. Figure 2. Operating Supply Current vs. Temp. 9.30 9.00 8.70 8.40 8.10 VSTOP Vstop(V) 15.6 15.3 15.0 14.7 14.4 Vstart(V) -25 0 25 50 75 100 125 150 Temp(℃) -25 0 25 50 75 100 125 150 Temp(℃) Figure 3. Stop Threshold Voltage vs. Temp Figure 4. Start Threshold Voltage vs. Temp Fosc(kHz) 19.8 19.1 18.4 17.7 17.0 -25 0 25 50 75 100 125 150 Temp(℃) Figure 5. Initial Frequency VS. Temp 7 KA5S-SERIES Typical Performance Characteristics (Continued) Dmax(%) Ifb(mA) 98.0 96.5 95.0 93.5 92.0 1.10 1.00 0.90 0.80 0.70 -25 0 25 50 75 100 125 150 Temp(℃) -25 0 25 50 75 100 125 150 Temp(℃) Figure 6. Maximum Duty vs. Temp. Figure 7. Feedback Source Current vs. Temp. 7.55 7.50 7.45 7.40 7.35 -25 Vsd(V) 3.90 3.70 3.50 3.30 0 25 50 75 100 125 150 Temp(℃) Idelay(uA) -25 0 25 50 75 100 125 150 Temp(℃) Figure 8. Shutdown Feedback Voltage vs. Temp. Figure 9. Shutdown Delay Current vs. Temp. 26.6 25.9 25.2 24.5 23.8 -25 Vovp(V) 4.20 4.10 4.00 3.90 3.80 Iover(A) 0 25 50 75 100 125 150 Temp(℃) -25 0 25 50 75 100 125 150 Temp(℃) Figure 10. Over Voltage Protection vs. Temp. Figure 11. Peak Current Limit vs. Temp 8 KA5S-SERIES Typical Performance Characteristics (Continued) Iss(mA) 1.0 1.0 0.9 0.8 -25 0 25 50 75 100 125 150 Temp(℃) Vss(V) 5.10 5.05 5.00 4.95 4.90 -25 0 25 50 75 100 125 150 Temp(℃) Figure 12. Soft Start Current vs. Temp. Figure 13. Soft Start Voltage vs. Temp. 9 KA5S-SERIES Package Dimensions TO-3P-5L 10 KA5S-SERIES Package Dimensions (Continued) TO-3P-5L(Forming) 11 KA5S-SERIES Package Dimensions (Continued) TO-220-5L 12 KA5S-SERIES Package Dimensions (Continued) TO-220-5L(Forming) 13 KA5S-SERIES TOP Mark and Pinout Information F M AR KI NG Y Y WW 1 2 3 4 5 Pin No. 1 2 3 4 5 Symbol Drain GND VCC F/B S/S Description SenseFET Drain Ground (Source) Control Part Supply Input PWM Non Inverting Input Soft start & External Sync. Device KA5S0765C KA5S0965 KA5S12656 KA5S1265 5S0765C 5S0965 5S12656 5S1265 Marking Notes ; (1) F ; Fairchild Semiconductor (2) 5S0765C, 5S0965, 5S12656, 5S1265; Device Marking Name (3) YY: Last Two Digit of Calender Year (4) WW: Patweek Based on Fairchild Semiconductor Work Month Calender 14 KA5S-SERIES Ordering Information Product Number KA5S0765CTU KA5S0765CYDTU KA5S0965TU KA5S0965YDTU KA5S12656TU KA5S12656YDTU KA5S1265TU KA5S1265YDTU TU : Non Forming Type YDTU : Forming Type Package TO-220-5L TO-220-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Marking Code 5S0765C 5S0965 5S12656 5S1265 BVdss 650V 650V 650V 650V Rds(on) 1.6Ω 1.2Ω 0.9Ω 0.9Ω 15 KA5S-SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/25/03 0.0m 001  2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.