B772

KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC Rθja Rθjc TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Value - 40 - 30 -5 -3 -7 - 0.6 10 1 132 13.5 150 - 55 ~ 150 Units V V V A A A W W °C/W °C/W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = - 30V, IE = 0 VEB = - 3V, IC = 0 VCE = - 2V, IC = - 20mA VCE = - 2V, IC = - 1A IC = - 2A, IB = - 0.2A IC = - 2A, IB = - 0.2A VCE = - 5V, IE = - 0.1A VCB = - 10V, IE = 0 f = 1MHz 30 60 220 160 - 0.3 - 1.0 80 55 Min. Typ. Max. -1 -1 400 - 0.5 - 2.0 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Typical Characteristics -2.0 1000 VCE = -2V IC[A], COLLECTOR CURRENT -1.6 -1.2 IB = -8mA IB = -7mA IB = -6mA IB = -5mA hFE, DC CURRENT GAIN IB = -10mA IB = -9mA 100 -0.8 IB = -4mA IB = -3mA 10 -0.4 IB = -2mA IB = -1mA 0 -4 -8 -12 -16 -20 1 -1 -10 -100 -1000 -10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE -10000 I C = 1 0· I B 1000 IE = 0 f=1MHz -1000 Cob[pF], CAPACITANCE -100 -1000 -10000 VBE(sat) -100 100 10 -10 VCE(sat) -1 -1 -10 1 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 -10 VCE =5V IC MAX(Pulse) 10 ms Dis Lim sipat ited ion 1m s s 0u 10 100 IC[A], COLLECTOR CURRENT IC MAX(DC) -1 s/b Lim ite d 10 -0.1 VCEOMAX 1 -0.01 -0.1 -1 -0.01 -1 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Typical Characteristics (Continued) 160 16 140 14 120 PC[W], POWER DISSIPATION 125 150 175 200 12 dT[%], Ic DERATING 100 10 80 s/b Di ss Lim 8 ited 60 ip a 6 40 tio n Li m ite 4 d 20 2 0 25 50 o 0 75 100 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1