BC182B

BC182B BC182B NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 ~ 150 Units V V V mA °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 2mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, VBE = 0 VEB = 4V, IE = 0 VCE = 5V, IC = 10µA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA, f = 100MHz VCE = 10V, IC = 0, f = 1MHz VCE = 5V, IC = 2mA, f = 1KHz VCE = 5V, IC = 0.2mA RS = 2KΩ, f = 1KHz, BW = 200Hz 240 0.55 150 5 500 10 dB 40 80 0.25 0.6 1.2 0.7 V V V MHz pF Min. 50 60 6 15 15 Typ. Max. Units V V V nA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current On Characteristics hFE DC Current Gain VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Dynamic Characteristics fT Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 BC182B Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation @TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max. 350 2.8 357 125 Units mW mW/°C mW/°C °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 BC182B Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I3