BC337-16

BC337-16 / BC337-25 Discrete POWER & Signal Technologies BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 45 50 5.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1 997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V (BR)CEO V (BR)CES V (BR)EBO I CBO Collector-Em itter Breakdown Voltage Collector-Base Breakdown Voltage Em itter-Base Breakdown Voltage Collector Cutoff Current I C = 1 0 m A, I B = 0 I C = 1 00 µ A, I E = 0 I E = 1 00 µ A, I C = 0 V CB = 2 0 V, IE = 0 , T A = + 25 ° C V CB = 2 0 V, IE = 0 , T A = + 150 °C V EB = 5 .0 V, IC = 0 45 50 5.0 100 5.0 10 V V V nA µA µA I EBO Em itter Cutoff Current ON CHARACTERISTICS hFE DC Current Gain VCE = 1.0 V, IC = 100 mA 337-16 337-25 VCE = 1.0 V, IC = 500 mA IC = 500 mA, IB = 50 mA VCE = 1.0 V, IC = 500 mA 100 160 40 250 400 0.7 1.2 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage