BC517

BC517

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    BC517 - NPN Darlington Transistor - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BC517 数据手册
BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 30 40 10 Units V V V A °C - Continuous 1.2 -55 ~ 150 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(on) Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Conditions IC = 2.0mA, IB = 0 IC = 10µA, IE = 0 IE = 100nA, IC = 0 VCB = 30V, IE = 0 VCE = 2.0V, IC = 20mA IC = 100mA, IB = 0.1mA IC = 10mA, VCE = 5.0V Min. 30 40 10 Max Units V V V 100 nA On Characteristics * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage 30,000 1 1.4 V V Thermal Characteristics T Symbol PD RθJC RθJA Total Device Dissipation Derate above 25°C a = 25°C unless otherwise noted Parameter Value 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC517 Rev. A BC517 NPN Darlington Transistor Mechanical Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters 2 BC517 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™  Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15
BC517
1. 物料型号: - 型号:BC517 - 制造商:Fairchild Semiconductor

2. 器件简介: - BC517是一款NPN达林顿晶体管,设计用于需要极高电流增益的应用,可在高达1.0A的电流下工作。

3. 引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极) - 封装形式为TO-92。

4. 参数特性: - 绝对最大额定值: - VCEO(集电极-发射极电压):30V - VCBO(集电极-基极电压):40V - VEBO(发射极-基极电压):10V - 集电极电流 - 连续:1.2A - TJ,TSTG(工作和存储结温度范围):-55至150°C

5. 功能详解: - 电气特性(Ta = 25°C除非另有说明): - V(BR)CEO(集电极-发射极击穿电压):最小值30V - V(BR)CBO(集电极-基极击穿电压):最小值40V - V(BR)EBO(发射极-基极击穿电压):最小值10V - ICBO(集电极截止电流):最大值100nA - hFE(直流电流增益):最小值30,000 - VcE(sat)(集电极-发射极饱和电压):最大值1V - VBE(on)(基极-发射极导通电压):最大值1.4V

6. 应用信息: - 该晶体管适用于需要极高电流增益的应用,例如在音频放大器、电源开关和马达控制等场合。

7. 封装信息: - 封装形式为TO-92,具体尺寸和机械尺寸图可以参考文档中的图片链接。
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