BC547

BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 1 TO-92 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 50 30 65 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C VCEO Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA hFE Classification Classification hFE ©2002 Fairchild Semiconductor Corporation A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100 80 IB = 350µA IB = 300µA IB = 250µA IB = 200µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400µA VCE = 5V 10 60 40 IB = 150µA IB = 100µA 1 20 IB = 50µA 0 0 2 4 6 8 10 12 14 16 18 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 VCE = 5V 1000 IC = 10 IB hFE, DC CURRENT GAIN 1000 V BE(sat) 100 100 10 V CE(sat) 1 1 10 100 1000 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE f=1MHz IE = 0 10 VCE = 5V 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 V CB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC546/547/548/549/550 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1