BC635

BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 V V V V A A mA W °C °C 45 60 100 V V V Value 45 60 100 Units V V V VCES • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Test Condition IC=10mA, IB=0 Min. 45 60 80 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz 100 25 40 40 25 0.1 0.1 250 160 0.5 1 V V MHz Typ. Max. Units V V V µA µA ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/639 Typical Characteristics 200 IB = 1.8 mA 1000 IC[mA], COLLECTOR CURRENT IB = 1.6 mA 160 VCE = 2V IB = 1.2 mA 120 IB = 1.0 mA 80 hFE, DC CURRENT GAIN 50 IB = 1.4 mA 100 IB = 0.8 mA IB = 0.6 mA 40 IB = 0.4 mA IB = 0.2 mA 0 0 10 20 30 40 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10 IB 1 V BE(sat) IC[mA], COLLECTOR CURRENT VCE = 2V 100 0.1 10 V CE(sat) 0.01 1 10 100 1000 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 f=1MHz Cob[pF], CAPACITANCE 10 1 1 10 100 V CB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/639 Package Dimensions TO-92 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1