BC807-40

BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC807 : BC808 VCEO Collector-Emitter Voltage : BC807 : BC808 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature -45 -25 -5 -800 -310 150 -65 ~ 150 V V V mA mW °C °C -50 -30 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC807 : BC808 Collector-Emitter Breakdown Voltage : BC807 : BC808 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -0.1mA, IC=0 VCE= -25V, VBE=0 VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA f=50MHz VCB= -10V, f=1MHz 100 12 100 60 -5 -100 -100 630 -0.7 -1.2 V V MHz pF V V V nA nA Typ. Max. Units V V BVCES BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 hFE Classification Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170- Marking Code Type Marking 807-16 9FA 807-25 9FB 807-40 9FC 808-16 9GA 808-25 9GB 808-40 9GC ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 Typical Characteristics -500 -20 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -400 -300 mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = IB= -16 µA - 80 µA - 70 I= B IB= µA - 60 IB= P T µA - 50 IB= - 40 =6 00 mW -12 µA 30µA A 1.5m IB = PT = 600 mW -200 -8 IB = - IB = - 1.0mA IB = - 0.5mA IB = - 20 -4 µA -100 IB = - 10µA IB = 0 -0 -0 -1 -2 -3 -4 -5 -0 -0 -10 -20 -30 IB = 0 -40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 PULSE IC = 10 IB PULSE V CE(sat) VCE = - 2.0V hFE, DC CURRENT GAIN 100 -1 - 1.0V 10 -0.1 V BE(sat) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 100 IC[mA], COLLECTOR CURRENT VCE = -1V PULSE f = 1.0MHz Cib, Cob[pF], CAPACITANCE -100 Cib Cob 10 -10 -1 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 1 -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 Typical Characteristics (Continued) 1000 fT[MHz], GAIN BANDWIDTH PRODUCT VCE = -5.0V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1