BC817

BC817/BC818 NPN Epitaxial Silicon Transistor November 2006 BC817/BC818 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 tm 2 1 SOT-23 Absolute Maximum Ratings* Symbol VCBO Ta = 25°C unless otherwise noted 1. Base 2. Emitter 3. Collector Parameter Collector-Base Voltage : BC817 : BC818 Value 50 30 45 25 5 800 310 150 -65 ~ 150 Units V V V V V mA mW °C °C VCEO Collector-Emitter Voltage : BC817 : BC818 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC817 : BC818 Collector-Emitter Breakdown Voltage : BC817 : BC818 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 Min. 45 25 Typ. Max. Units V V V V V BVCES IC=0.1mA, VBE=0 50 30 IE=0.1mA, IC=0 VCE=25V, VBE=0 VEB=4V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA f=50MHz VCB=10V, f=1MHz 100 12 100 60 5 100 100 630 0.7 1.2 V V MHz pF BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob nA nA * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC817/BC818 Rev. B BC817/BC818 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE1 hFE2 16 110 ~ 250 60~ 25 160 ~ 400 100~ 40 250 ~ 630 170~ Ordering Information Device(note1) BC81716MTF BC81725MTF BC81740MTF BC81816MTF BC81825MTF BC81840MTF Note1 : Device Marking 8FA 8FB 8FC 8GA 8GB 8GC Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Packing Method Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Qty(pcs) 3000 3000 3000 3000 3000 3000 Pin Difinitions 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector Affix “-16,-25,-40” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. 2 BC817/BC818 Rev. B www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor Typical Performance Characteristics 600 1.0 Vbe(on), Base-Emitter On Voltage,[V] 500 BC81725MTF Vce=1V VCE = 1V 0.9 hfe, Current Gain 0.8 400 0.7 25 C o 75 C o 125 C o 300 0.6 200 -25 C 100 o 25 C o 75 C o 125 C o 0.5 0.4 0 1 10 100 1000 0.3 1 10 100 Collector Current, [mA] Collector Current, [mA] Figure 1. DC current Gain Figure 2. Base-Emitter On Voltage 1.2 0.4 Ic=10Ib 125 C Vbe(sat), Saturation Voltage,[V] o Ic=10Ib 1.0 o Vce(sat), Saturation Voltage,[V] 0.3 -25 C 0.8 o 25 C 75 C 25 C -25 C 0.1 o o o 0.2 0.6 125 C 75 C o o 0.4 0.0 10 100 1000 10 100 1000 Collector Current, [mA] Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 0.4 PD - Power Dissipation (W) 0.3 0.2 0.1 0.0 0 25 50 75 O 100 125 150 Temperature, [ C] Figure 5. Power Dissipation vs Ambient Temperature 3 BC817/BC818 Rev. B www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters 4 BC817/BC818 Rev. B www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon Transistor BC817/BC818 NPN Epitaxial Silicon Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 BC817/BC818 Rev. B www.fairchildsemi.com