BC847AMTF

BC846- BC850 NPN Epitaxial Silicon Transistor August 2006 BC846- BC850 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 1 3 tm SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage Ta = 25°C unless otherwise noted Parameter : BC846 : BC847/850 : BC848/849 Value 80 50 30 65 45 30 6 5 100 310 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C VCEO Collector-Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC846/847 : BC848/849/850 VEBO IC PC TJ TSTG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA Min. 110 Typ. Max. 15 800 Units nA Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE= 5V, IC= 200µA RG=2KΩ, f=1KHz VCE= 5V, IC= 200µA RG=2KΩ, f=30~15000Hz 580 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 250 600 mV mV mV mV 700 720 mV mV MHz 6 pF pF 10 4 4 3 dB dB dB dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC846- BC850 Rev. B BC846- BC850 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 Ordering Information Device(note1) BC846AMTF BC846BMTF BC846CMTF BC847AMTF BC847BMTF BC847CMTF BC848AMTF BC848BMTF BC848CMTF BC849AMTF BC849BMTF BC849CMTF BC850AMTF BC850BMTF BC850CMTF Note1 : Device Marking 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Packing Method Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Qty(pcs) 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 Pin Difinitions 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. 2 BC846- BC850 Rev. B www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor Typical Performance Characteristics 100 10000 IC[mA], COLLECTOR CURRENT 80 IB = 400µA IB = 350µA VCE = 5V hFE, DC CURRENT GAIN IB = 300µA 60 IB = 250µA IB = 200µA 1000 40 IB = 150µA IB = 100µA 100 20 IB = 50µA 0 0 4 8 12 16 20 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 100 I C = 1 0 IB 1000 VBE(sat) IC[mA], COLLECTOR CURRENT VCE = 2V 10 100 1 VCE(sat) 10 1 10 100 1000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 1000 f=1MHz VCE=5V Cob[pF], CAPACITANCE 10 100 1 10 0.1 1 10 100 1000 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3 BC846- BC850 Rev. B www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters 4 BC846- BC850 Rev. B www.fairchildsemi.com BC846- BC850 NPN Epitaxial Silicon Transistor BC846- BC850 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 BC846- BC850 Rev. B www.fairchildsemi.com