BC850C

BC846/847/848/849/850 BC846/847/848/849/850 Switching and Amplifier Applications 3 • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO Parameter Value Units : BC846 : BC847/850 : BC848/849 80 50 30 V V V : BC846 : BC847/850 : BC848/849 65 45 30 V V V : BC846/847 : BC848/849/850 6 5 V V Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=30V, IE=0 Min. hFE VCE (sat) DC Current Gain VCE=5V, IC=2mA 110 Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 90 200 VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 700 900 VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA VCE=5V, IC=10mA fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 NF Noise Figure VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000Hz 2 1.2 1.4 1.4 ©2002 Fairchild Semiconductor Corporation : BC846/847/848 : BC849/850 : BC849 : BC850 580 Typ. Max. 15 Units nA 800 660 250 600 mV mV mV mV 700 720 mV mV MHz 6 pF pF 10 4 4 3 dB dB dB dB Rev. A2, August 2002 Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 Marking Code Type Mark 846 847 848 849 850 A B C A B C A B C A B C A B C 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC846/847/848/849/850 hFE Classification BC846/847/848/849/850 Typical Characteristics 10000 IB = 400µA IB = 350µA 80 VCE = 5V IB = 300µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 100 IB = 250µA 60 IB = 200µA IB = 150µA 40 IB = 100µA 20 1000 100 IB = 50µA 10 0 0 4 8 12 16 1 20 10 Figure 1. Static Characteristic Figure 2. DC current Gain 10000 100 IC = 10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE V BE(sat) 1000 100 V CE(sat) 10 1 10 100 VCE = 2V 10 1 0.1 0.0 1000 0.2 IC[mA], COLLECTOR CURRENT f=1MHz 10 1 0.1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.6 0.8 1.0 1.2 1000 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 1 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE 100 1000 VCE =5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, August 2002 BC846/847/848/849/850 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1