BC857S

BC857S BC857S E2 B2 C1 SC70-6 Mark: 3C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 45 50 50 5.0 200 -55 to +150 Units V V V V mA °C 4 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BC857S 300 2.4 415 Units mW mW/°C °C/W 1998 Fairchild Semiconductor Corporation BC857S PNP Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 30 V VCB = 30 V, TA = 150°C 45 50 50 5.0 15 4.0 V V V V nA µA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 125 630 0.3 0.65 0.75 0.82 V V V V 0.6 SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure IC = 10 mA, VCE = 5.0, f = 100 mHz VCB = 10 V, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 200 3.5 2.5 MHz pF dB NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 0.1 0.05 0 0.1 125 °C 25 °C 400 300 125 °C β = 10 25 °C 200 100 0 0.01 - 40 °C - 40 °C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 BC857S PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V - 40°C 25 °C 125 °C - 40 °C 25 °C 125 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10 BVCER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0.1 75 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( ° C) 125 70 0.1 1 10 100 1000 RESISTANCE (kΩ ) V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25° C f = 1.0 MHz 3 2 Ic = 100 uA 50 mA 300 mA CAPACITANCE (pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) V CE - COLLECTOR VOLTAGE (V) B C857S PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 300 Switching Times vs Collector Current 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V 40 Vce = 5V ts 30 20 10 0 1 10 20 50 100 150 I C - COLLECTOR CURRENT (mA) 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Power Dissipation vs Ambient Temperat ure PD - POWE R DIS SIPATION (W) 500 400 SC70 -6 300 200 100 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G