BC858

BC856- BC860 PNP Epitaxial Silicon Transistor August 2006 BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 2 1 3 tm SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage Ta = 25°C unless otherwise noted Parameter : BC856 : BC857/860 : BC858/859 Value -80 -50 -30 -65 -45 -30 -5 -100 310 150 -65 ~ 150 Units V V V V V V V mA mW °C °C VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF Parameter Collector Cut-off Current DC Current Gain Test Condition VCB= -30V, IE=0 VCE= -5V, IC= -2mA Min. 110 Typ. Max. -15 800 Units nA Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200µA RG=2KΩ, f=1KHz VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000Hz -600 -90 -250 -700 -900 -660 150 -300 -650 mV mV mV mV -750 -800 mV mV MHz 6 2 1 1.2 1.2 10 4 4 2 pF dB dB dB dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC856- BC860 Rev. B BC856- BC860 PNP Epitaxial Silicon Transistor hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 Ordering Information Device(note1) BC856AMTF BC856BMTF BC856CMTF BC857AMTF BC857BMTF BC857CMTF BC858AMTF BC858BMTF BC858CMTF BC859AMTF BC859BMTF BC859CMTF BC860AMTF BC860BMTF BC860CMTF Note1 : Device Marking 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC 9DA 9DB 9DC 9EA 9EB 9EC Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Packing Method Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Qty(pcs) 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 Pin Difinitions 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. 2 BC856- BC860 Rev. B www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor Typical Performance Characteristics -50 1000 -45 IC[mA], COLLECTOR CURRENT -40 -35 -30 -25 -20 -15 -10 -5 -0 -0 -2 -4 -6 -8 IB = - 400µA IB = - 350µA IB = - 250µA IB = - 200µA IB = - 150µA IB = - 100µA IB = - 50µA VCE = - 5V hFE, DC CURRENT GAIN IB = - 300µA 100 -10 -12 -14 -16 -18 -20 10 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 I C = 1 0 IB -1 VBE(sat) IC[mA], COLLECTOR CURRENT VCE = - 5V -10 -0.1 -1 VCE(sat) -0.01 -0.1 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 f=1MHz IE=0 Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 10 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3 BC856- BC860 Rev. B www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters 4 BC856- BC860 Rev. B www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 BC856- BC860 Rev. B www.fairchildsemi.com