BCW31_02

BCW31 BCW31 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current (DC) Operating and Storage Junction Temperature Range Value 32 32 5.0 500 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = 2.0mA, IB = 0 IC = 10µA, IB = 0 IC = 10µA, IC = 0 VCB = 32V, IE = 0 VCB = 32V, IE = 0, TA = 100°C IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V IC = 2.0mA, VCE = 5.0V f = 35MHz VCB = 10V, IE = 0, f = 1.0MHz IC = 0.2mA, VCE = 5.0V RS = 2.0kΩ, f = 1.0kHz BW = 200Hz 0.55 200 4.0 10 pF dB 110 Min. 32 32 5.0 100 10 220 0.25 0.7 V V Typ. Max. Units V V V nA µA Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics hFE VCE(sat) VBE(on) fT Cobo NF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Small Signal Characteristics Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/°C °C/W Device mounted on FR-4PCB 40mm × 40mm × 1.5mm ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BCW31 Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 400 Vce = 5V C 125 °캜 0.4 β = 10 0.3 C 25°캜 300 캜 25 °C 200 캜 - 40 °C 0.2 C 125 °캜 100 0.1 - 40°캜 C 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 1 10 100 I C - COLLECTOR CURRENT (mA) 400 Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VBESAT - COLLECTOR-EMITTER VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 C - 40°캜 VBEON - BASE-EMITTER ON VOLTAGE (V) 1 0.8 0.6 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 C - 40°캜 C 25°캜 125°캜 C 캜 25°C 125 C °캜 β = 10 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) 10 VCB = 60V CAPACITANCE (pF) 100 f = 1.0 MHz 10 Cib Cob 1 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE (V) 100 Figure 5. Collector-Cutoff Current vs Ambient Temperature Figure 6. Input and Outtput Capacitance vs Reverse Voltage ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BCW31 Typical Characteristics (Continued) 300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V 350 ts P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Figure 7. Switching Times vs Collector Current Figure 8. Power Dissipation vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BCW31 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1