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BCW61A

BCW61A

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    BCW61A - PNP EPITAXIAL SILICON TRANSISTOR - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BCW61A 数据手册
BCW61A/B/C/D GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -32 -32 -5.0 -100 350 -55 ~ 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1µA, IC=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10µA Min -32 -5 -20 20 40 100 120 140 250 380 60 80 100 100 Max Unit V V nA VCE= -5V, IC= -2mA 220 310 460 630 VCE= -5V, IC= -50mA VCE (sat) VBE (sat) VBE (on) COB NF tON tOFF IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V RG=20KΩ , f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6V, IB2= -1mA R1=R2=50KΩ , RL=990Ω 0.68 0.6 0.6 -0.55 -0.25 1.05 0.85 0.75 6 6 150 800 V V V V V pF dB ns ns Rev. B © 1999 Fairchild Semiconductor Corporation BCW61A/B/C/D MARKING CODE TYPE MARK. BCW61A BA BCW61B BB PNP EPITAXIAL SILICON TRANSISTOR BCW61C BC BCW61D BD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW61A
1. 物料型号: - BCW61A - BCW61B - BCW61C - BCW61D

2. 器件简介: - BCW61A/B/C/D是PNP EPITAXIAL SILICON TRANSISTOR,即PNP型外延硅晶体管,属于通用晶体管。

3. 引脚分配: - 1. Base(基极) - 2. Emitter(发射极) - 3. Collector(集电极)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(Vcao):-32V - 集电极-发射极电压(VCEO):-32V - 发射极-基极电压(VEBO):-5.0V - 集电极电流(Ic):-100mA - 集电极耗散(Pc):350mW - 存储温度(TSTG):-55~150°C

5. 功能详解: - 电气特性(TA=25°C): - 集电极-发射极击穿电压(BVCEO):-32V - 发射极-基极击穿电压(BVEBO):-5V - 集电极截止电流(ICES):-20nA - hFE(直流电流增益):BCW61A为120-220,BCW61B为140-310,BCW61C为250-460,BCW61D为380-630 - 集电极-发射极饱和电压(Vce(sat)):-0.55V - 基极-发射极饱和电压(VBe(sat)):0.68-1.05V - 基极-发射极导通电压(VBe(on)):0.6-0.75V - 输出电容(CoB):6pF - 噪声系数(NF):6dB - 导通时间(toN):150ns - 关闭时间(ton):800ns

6. 应用信息: - 该晶体管适用于通用的晶体管应用场合。

7. 封装信息: - SOT-23封装。
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