BCX79_1

BCX79 BCX79 E B TO-92 C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 45 45 5.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BCX79 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1 997 Fairchild Semiconductor Corporation BCX79 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICEX ICES IEBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IE = 1.0 µ A, IC = 0 VCE = 45 V, VBE = 0.2 V, TA = +100 °C VCE = 45 V, IE = 0, VCE = 45 V, IE = 0, TA = +125 °C VEB = 4.0 V, IC = 0 45 5.0 20 10 2.5 20 V V µA nA µA nA ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA IC = 100 mA, IB = 2.5 mA IC = 100 mA, IB = 2.5 mA VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 100 mA 0.6 120 80 40 630 1,000 0.6 1.0 0.7 0.9 V V V V VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Ccb Ceb hie hoe NF Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Output Admittance Noise Figure VCB = 10 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 0.2 mA, RS = 2.0 kΩ, f = 1.0 kHz 1.6 4.5 15 8.5 100 6.0 pF pF kΩ µ mhos dB SWITCHING CHARACTERISTICS ton ton toff toff Turn-on Time Turn-on Time Turn-off Time Turn-off Time VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA 150 150 800 800 ns ns ns ns TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G