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BD537

BD537

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    BD537 - Medium Power Linear and Switching Applications - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
BD537 数据手册
BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 1.Base Value 45 60 80 45 60 80 45 60 80 5 8 1 50 150 - 65 ~ 150 Units V V V V V V V V V V A A W °C °C VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Collector Cut-off Current : BD533 : BD535 : BD537 Emitter Cut-off Current * DC Current Gain : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.8 1.5 3 12 75 100 0.8 V V V MHz Min. Typ. Max. 100 100 100 100 100 100 1 Units µA µA µA µA µA µA mA ICES IEBO hFE hFE hFE Groups J K VCE = 2V, IC = 2A VCE = 2V, IC = 3A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 2A, IB = 0.2A IC = 6A, IB = 0.6A VCE = 2V, IC = 2A VCE = 1V, IC = 500mA VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD533/535/537 Typical characteristics 1000 1 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 2V IC = 10 IB hFE, DC CURRENT GAIN 0.1 10 0.01 0.1 1 10 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 1.8 VBE(sat)[V], SATURATION VOLTAGE 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 IC = 10 IB IC[A], COLLECTOR CURRENT 10 IC Max. 10 ms 1m s 10 µs 100µ s DC 1 0.1 1 10 1 10 BD533 BD535 BD537 100 IC[A], COLLECTOR CURRENT V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD533/535/537 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E
BD537 价格&库存

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