BD680A

BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682 1 TO-126 2.Collector 3.Base 1. Emitter Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 ~ 150 Units V V V V V V V V V A A mA W °C/W °C °C VCEO Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature VEBO IC ICP IB PC Rθja TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V µA µA µA µA µA µA µA µA mA Typ. Max. Units ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, VBE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A IC = - 2A, IB = - 40mA IC = - 1.5A, IB = - 30mA VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A ICEO Collector Cut-off Current : BD676A : BD678A : BD680A : BD682 Emitter Cut-off Current * DC Current Gain : BD676A/678A/680A : BD682 IEBO hFE VCE(sat) * Collector-Emitter Saturation Voltage : BD676A/678A/680A : BD682 * Base-Emitter On Voltage : BD676A/678A/680A : BD682 VBE(on) * Pulse Test: PW=300µs, duty Cycle=1.5% Pulse ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 BD676A/678A/680A/682 Typical Characteristics 10000 VCE(sat)[V], SATURATION VOLTAGE VCE = -3V -2.4 IC = 250 IB -2.0 hFE, DC CURRENT GAIN -1.6 1000 -1.2 -0.8 -0.4 100 -0.1 -1 -10 -0.0 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -4.0 -3.6 VCE = 3V IC(max). Pulsed IC(max). Continuous 10µ s IC[A], COLLECTOR CURRENT -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -0.0 IC[A], COLLECTOR CURRENT -3.2 DC -1 100 µs BD676A BD678A BD680A BD682 -0.1 -1 -10 1ms 10ms -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 VBE[V], BASE-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area 20 PC[W], POWER DISSIPATION 16 12 8 4 0 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 BD676A/678A/680A/682 Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1