BF244B

BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* Symbol VDG VGS ID IGF Tstg Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range TA = 25°C unless otherwise noted Parameter Value 30 - 30 50 10 -55 to +150 Units V V mA mA °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGSS(off) VGS Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage IG = 1.0 µA, VDS = 0 VGS = - 20 V, VDS = 0 VDS = 15 V, ID = 10 nA VDS = 15 V, ID = 200 µA 244A 244B 244C 30 5.0 - 0.5 - 0.4 - 1.6 - 3.2 - 8.0 - 2.2 - 3.8 - 7.5 V nA V V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 244A 244B 244C 2.0 6.0 12 6.5 15 25 mA mA mA SMALL SIGNAL CHARACTERISTICS yfs yos yrs Ciss Crss Coss NF F(Yfs) Forward Transfer Admittance Output Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure Cut-Off Frequency VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 20 V, VGS = - 1.0 V VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 kΩ, f = 100 MHz VDS = 15 V, VGS = 0 3.0 5.6 40 1.0 3.0 0.7 0.9 1.5 700 6.5 mmhos mmhos µmhos µmhos pF pF pF dB MHz 5 Typical Characteristics Transfer Characteristics 20 ID - DRAIN CURRENT (mA) r DS - DRAIN ON RESISTANCE (Ω ) Channel Resistance vs Temperature 1000 500 300 200 100 V GS(OFF) = -4.5V TA = -55 C T A = +25 C O O V DS = 15V 16 V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V 12 T A = +125O C TA = -55 C T A = +25 C T A = +125O C O O 8 50 30 20 10 4 V DS = 100mV -2.5 V 0 0 -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5 V GS = 0 V -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( C) BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Typical Characteristics (continued) gfs -- TRANSCONDUCTANCE (mmhos) Transconductance Characteristics 7 6 5 4 3 2 1 0 0 Common Drain-Source Characteristics I D -- DRAIN CURRENT (mA) DS TA = -55 C T A = +25 C T A = +125O C O O V = 15V 5 4 TYP V 3 T A = +25 C GS(OFF) O = -5.0V = 0V TA = -55 C T A = +25 C T A = +125 C V GS(OFF) = -4.5V O O O 5V -0. -1.0V V -1.5 -2.0V V 2 1 G S -2.5V -3.0V -3.5V -4.0V -2.5 V -1 -2 -3 -4 VGS GATE-SOURCE VOLTAGE(V) -5 0 0 0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V) 1 gos -- OUTPUT CONDUCTANCE (u mhos) T A = +25 C f = 1.0 kHz 20 10 5 V DG O V G S(OFF) = - 5.5V 5.0V 10V 15V 20V gfs, IDSS @ V DS = 15 V, V GS = 0 PULSE r DS @ VDS= 100mV, V GS = 0 100 50 30 20 10 5 = 5v 10 20 15 5 10 15 20 V G S(OFF) 1 0.5 V 0.1 0.01 0.02 G S(OFF) = - 3.5V = - 1.5V 5 10 20 10 -1 VGS(OFF) @ V GS = 15V, I D= 1nA 3 2 1 - 10 0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA) -2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V) GS Transconductance vs Drain Current gfs -- TRANSCONDUCTANCE (mmhos) 10 e n- NOISE VOLTAGE ( nV/ Noise Voltage vs Frequency V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz Hz ) V GS(OFF) = - 1.5V O TA = -55 C 5 T A = +25 C T A = +125 O C 1 O TA = -55 C V GS(OFF) T A = +25 C T A = +125 O C = - 5V V DG = 15V f = 1.0 kHz O O 0.5 10 5 I D = 0.5 mA I D = 3 mA 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I D - DRAIN CURRENT (mA) 5 10 1 0.01 0.03 0.1 0.3 1 3 10 f -- FREQUENCY (kHz) 30 100 gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS Output Conductance vs Drain Current r DS -- DRAIN "ON" RESISTANCE ( Ω ) Transconductance Parameter Interactions BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Typical Characteristics (continued) Capacitance vs Voltage 10 ) -- CAPACITANCE (pF) f = 0.1 - 1.0 MHz Noise Figure Frequency 5 V DS NF -- NOISE FIGURE (dB) 4 I D = 15V = 5.0 mA 5 C is ( V DS = 15 V) 1 C rs ( V DS = 0 V) 3 R g = 1.0 k Ω O T A = +25 C 2 C is ( C rs 1 0 -5 -10 -15 VG S-- GATE-SOURCE VOLTAGE(V) -20 0 10 20 30 50 100 200 300 f -- FREQUENCY (MHz) 500 1000 Common Gate Characteristics Output Admittance Y ogs-- OUTPUT CONDUCTANCE (mmhos) Input Admittance Y -- INPUT ADMITTANCE (mmhos) igs V DS = 15V V GS = 0 (CG) 1 b Og S (x 10) g Ogs 10 5 g igs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 b igs 5 700 1000 1 100 200 300 500 f -- FREQUENCY (MHz) Forward Transadmittance Yfgs -- FORWARD TRANSFER (mmhos) Reverse Transadmittance Y rgs-- REVERSE TRANSFER (mmhos) 1 10 5 +g fgs V DS = 15V V GS = 0 (CG) g rgs -b fgs 1 - b rgs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz ) 700 1000 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Common Source Characteristics Output Admittance -- OUTPUT CONDUCTANCE (mmhos) Input Admittance Yis s -- INPUT ADMITTANCE (mmhos) 10 5 1 V DS = 15V V GS = 0 (CS) b OSS (x 10) g OSS 1 b iss g iss V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Y OSS 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Forward Transadmittance Yfss -- FORWARD TRANSFER (mmhos) 5 Y rss-- REVERSE TRANSFER (mmhos) Reverse Transadmittance 10 5 10 +g fss -b 1 fss - b rss 1 -g V DS = 15V V GS = 0 (CS) 100 rss ( X 0.1) V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 200 300 500 f -- FREQUENCY (MHz) 700 1000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G