BPW38

BPW38 HERMETIC SILICON PHOTODARLINGTON PACKAGE DIMENSIONS FEATURES • Hermetically sealed package • Narrow reception angle 0.209 (5.31) 0.184 (4.67) • European “Pro Electron” registered DESCRIPTION 0.030 (0.76) NOM 0.255 (6.48) • The BPW38 is a silicon photodarlington mounted in narrow angle TO-18 package. 0.50 (12.7) MIN SCHEMATIC C 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) B Emitter Collector (Case) E 0.040 (1.02) 0.040 (1.02) 45° Ø0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 25 25 12 300 600 Unit °C °C °C °C V V V mW mW  2001 Fairchild Semiconductor Corporation DS300280 3/15/01 1 OF 4 www.fairchildsemi.com BPW38 HERMETIC SILICON PHOTODARLINGTON ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current Rise Time Fall Time IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 12 V, Ee = 0 Ee = 0.125 mW/cm2 VCE = 5 V(7) IC = 10 mA, VCC = 10 V RL = 100 IC = 10 mA, VCC = 10 V RL = 100 BVCEO BVEBO BVCBO ICEO 25 12 25 — — — — — — ±8 — 300 250 — — — 100 — — — — V V V nA Deg. mA µs µs IC(ON) tr tf 7.5 — — TYPICAL PERFORMANCE CURVES IL/IL @25˚C - RELATIVE LIGHT CURRENT 100 10 IL - NORMALIZED LIGHT CURRENT Ee = 5.0 mW/cm2 Ee = 2.0 mW/cm2 10 Ee = 1.0 mW/cm2 Ee = 0.5 mW/cm2 1.0 Ee = 0.2 mW/cm2 1.0 Ee = 0.1 mW/cm2 Ee = 0.05 mW/cm2 Normalized to: VCE = 5 V Ee = .2 mW/cm2 0 5 10 15 20 25 30 35 0.1 Normalized to: VCE = 5 V Ee = 0.2 mW/cm2 0.01 -50 -25 0 25 50 75 100 125 0.1 VCE - COLLECTOR TO EMITTER (V) TA - TEMPERATURE (˚C) Fig. 1 Light Current vs. Collector to Emitter Voltage Fig. 2 Relative Light Current vs. Ambient Temperature www.fairchildsemi.com 2 OF 4 3/15/01 DS300280 BPW38 HERMETIC SILICON PHOTODARLINGTON TYPICAL PERFORMANCE CURVES 1.0 110 100 RELATIVE SPECTRAL RESPONSE 0.9 RELATIVE AMPLITUDE 500 600 700 800 900 1000 1100 1200 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 90 80 70 60 50 40 30 20 10 0 -90˚ -70˚ -50˚ -30˚ -10˚ 10˚ 30˚ 50˚ 70˚ 90˚ - WAVELENGTH - NANOMETERS DEGREES Fig. 3 Spectral Response Curve Fig. 4 Angular Response 100 Load Resistance 10 BPW38 INPUT LED V CC 1.0 V 90 % OUTPUT PULSE IL - LIGHT CURRENT (mA) 100 10 Normalized to: RL = 100 IL = 10 mA 10 % I 1.0 1000 tr VCC = 10 V 0.1 0.01 0.1 1.0 10 100 ts RL OUTPUT td tf INPUT PULSE t ON = td + tr t OFF = ts + tf RELATIVE SWITCHING SPEED Fig. 5 Light Current vs. Relative Switching Speed Fig. 6 Test Circuit and Voltage Waveforms DS300280 3/15/01 3 OF 4 www.fairchildsemi.com BPW38 HERMETIC SILICON PHOTODARLINGTON DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 3/15/01 DS300280