BSS110

May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS84 BSS110 Units VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 20 KΩ) Gate-Source Voltage - Continuous Drain Current - Continuous @ TA = 30/35 C - Pulsed @ TA = 25 C TA = 25°C o o -50 -50 ±20 -0.13 -0.52 0.36 -55 to 150 300 -0.17 -0.68 0.63 V V V A Maximum Power Dissipation W °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 350 200 °C/W © 1997 Fairchild Semiconductor Corporation BSS84 Rev. C1 / BSS110. Rev. A2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V TJ = 125°C All All -50 -15 -60 -0.1 V µA µA µA nA IGSSR VGS(th) RDS(ON) gFS Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V VDS = VGS, ID = -1 mA VGS = -5V, ID = -0.10 A VGS = -10 V, ID = -0.17 A VDS = -25 V, ID = -0.10A VDS = -10 V, ID = -0.17 A All -10 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance All BSS84 BSS110 BSS84 BSS110 -0.8 -1.75 3.2 2.2 -2 10 10 V Ω S Forward Transconductance 0.05 0.05 0.27 0.29 37 37 16 5 45 40 25 12 DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf IS ISM VSD Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz BSS84 BSS110 pF pF pF All All SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time VDD = -30 V, ID = -0.27 A, VGS = -10 V, RGEN = 50 Ω All All All All 12 50 10 25 nS nS nS nS DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note 1) Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.26 A VGS = 0 V, IS = -0.34 A BSS84 BSS110 BSS84 BSS110 (Note 1) (Note 1) -0.13 -0.17 -0.52 -0.68 -0.95 -1 -1.2 -1.2 A A V BSS84 BSS110 Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics -1 3 VGS = -10V ID , DRAIN-SOURCE CURRENT (A) -0.8 -8.0 - 6.0 V GS = -3V DRAIN-SOURCE ON-RESISTANCE - 5.0 - 4.5 R DS(on) , NORMALIZED 2 .5 -3.5 -4 .0 -0.6 - 4.0 2 -4.5 - 5.0 -0.4 - 3.5 1 .5 -6 .0 -8 .0 -1 0 -0.2 - 3.0 - 2.5 0 -1 -2 -3 -4 V DS , DRAIN-SOURCE VOLTAGE (V) -5 -6 1 0 .5 -0.2 I D -0.4 -0.6 , DRA IN CURRENT (A) -0.8 -1 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 3 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 1.4 DRAIN-SOURCE ON-RESISTANCE I D = -0.13A V GS = -10V R DS(on) , NORMALIZED VGS = - 10V 2.5 1.2 2 T = 125°C J 1 1.5 2 5°C 1 0.8 - 55°C 0.5 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 0.6 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature -1 1.1 125°C -0 .8 I D , DRAIN CURRENT (A) Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE V DS = -10V TJ = -55°C V DS = V GS I D = -1m A 25°C 1.05 -0 .6 1 -0 .4 0.95 -0 .2 0.9 0 -2 -4 -6 V GS , GATE TO SOURCE VOLTAGE (V) -8 0.85 -5 0 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 1 .1 DRAIN-SOURCE BREAKDOWN VOLTAGE 1 I D = -250µA -I , REVERSE DRAIN CURRENT (A) 1 .0 5 0.5 0.2 0.1 0.05 VGS = 0 V BV DSS , NORMALIZED TJ = 1 2 5 ° C 25°C - 55°C 1 0.01 0.005 0 .9 5 S 0 .9 -50 -25 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 150 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature 70 50 30 10 -VGS , GATE-SOURCE VOLTAGE (V) C i ss I D = -0.13A 8 V DS = -10V -20V -40V CAPACITANCE (pF) 20 C o ss 6 10 4 5 3 2 0 .1 C r ss f = 1 MHz V GS = 0V 2 0 0 .2 0 .5 1 2 5 10 -V DS , DRA IN TO SOURCE VOLTAGE (V) 20 30 50 0 0 .5 1 Q g , GATE CHARGE (nC) 1 .5 2 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics VDD t d(on) V IN D t on RL V OUT VOUT 10% t off tr 90% t d(off) 90% tf VGS R GEN 10% 90% G DUT S V IN 10% 50% 50% PULSE W IDTH INVERTED Figure 11. Switching Test Circuit Figure 12. Switching Waveforms BSS84 Rev. C1 / BSS110. Rev. A2 Typical Electrical Characteristics (continued) 0 .5 2 , TRANSCONDUCTANCE (SIEMENS) T J = -55°C 1 0 .4 10 S(O Li N) t mi -I D , DRAIN CURRENT (A) 2 5°C 0u 0.5 RD 1m 10 10 0m ms s s s 0 .3 1 25°C 0 .2 0.1 0.05 1s 10 V GS = -10V SINGLE PULSE T A = 25°C s DC 0 .1 g FS V D S = - 10V 0 -0.2 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 0.01 0.005 1 2 5 10 20 30 - V DS , DRAIN -SOURCE VOLTAGE (V) 50 80 Figure 13. Transconductance Variation with Drain Current and Temperature Figure 14. Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 D = 0 .5 0 .2 0 .1 0 .05 0 .02 0 .01 P(pk) r(t), NORMALIZED EFFECTIVE R θJA (t) = r(t) * R θJA o R = 3 5 0 C/ W θJA 0.01 S ingle Pulse t1 t2 TJ - T A = P * RθJA (t) 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D uty Cycle, D = t1 /t2 100 300 Figure 15. Transient Thermal Response Curve Note : Characterization performed using a circuit board with 175oC/W typical case-to-ambient thermal resistance. BSS84 Rev. C1 / BSS110. Rev. A2 TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * *; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev. B SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1. 0 Customized La bel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled pa in standard option are shipped with rts 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an is made of polystyrene plastic (antid static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and s ome other options are described in the P ackaging Information table. These full reels are individually labeled and placed inside as tanda intermediate made of recyclable corrugated rd brown pap with a Fairchil d logo printing. One pizza box er contains eight reels maximum. And thes intermediate e boxes are placed inside a labeled shipping box which comes in different sizes depending on t e nu h mber of parts shippe d. Antistatic Cover Tape Human Readable Label Embossed Carrier Tape 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code ) TNR 3,000 7" Dia 187x107x183 24,000 0.0082 0.1175 D87Z TNR 10,000 13" 343x343x64 30,000 0.0082 0.4006 3P 3P 3P SOT-23 Unit Orientation 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Human Readable Label sample H uman readable Label SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0 187mm x 107mm x 183mm Intermediate Box for Stand Option ard Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 T E1 P2 D0 D1 F E2 B0 Wc W Tc K0 P1 A0 User Direction of Feed Dimensions are in millimeter Pkg type SOT-23 (8mm) A0 3.15 +/-0.10 B0 2.77 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.30 +/-0.10 T 0.228 +/-0.013 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D