BUT11A

BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1.Base Value 850 1000 Units V V 400 450 9 5 10 2 4 100 150 - 65 ~ 150 V A A A A W °C °C VEBO IC ICP IB IBP PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11 : BUT11A Base-Emitter Saturation Voltage : BUT11 : BUT11A Turn On Time Storage Time Fall Time VCE = 850V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 mA mA mA V V V V µs µs µs Test Condition IC = 100mA, IB = 0 Min. 400 450 Typ. Max. Units V V ICES VBE(sat) tON tSTG tF * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 1.25 Units °C/W Rev. B1, August 2001 ©2001 Fairchild Semiconductor Corporation BUT11/11A Typical Characteristics 1000 10 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 5V IC = 5 IB hFE, DC CURRENT GAIN 1 10 0.1 VCE(sat) 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 10 IC = 5 IB VBE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) IC[A], COLLECTOR CURRENT 8 6 4 0.1 2 0.01 0.01 0.1 1 10 0 0 200 400 600 BUT11 800 BUT11A 1000 1200 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Reverse Biased Safe OPerating Area 10 120 Ic MAX (Continuous) 100 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION C D 1 80 60 0.1 40 BUT11A BUT11 0.01 1 10 100 1000 20 0 0 25 50 O 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Figure 6. Power Derating Rev. B1, August 2001 BUT11/11A Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. B1, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3