BZX55C4V7

BZX55C 3V3 - BZX55C 33 Series Discrete POWER & Signal Technologies BZX55C 3V3 - 33 Series Half Watt Zeners Absolute Maximum Ratings* Parameter Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above 25°C Surge Power** TA = 25°C unless otherwise noted Tolerance: C = 5% Value -65 to +200 + 200 + 230 500 4.0 30 Units °C °C °C mW mW/°C W *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. DO-35 Electrical Characteristics Device MIN BZX55C 3V3 BZX55C 3V6 BZX55C 3V9 BZX55C 4V3 BZX55C 4V7 BZX55C 5V1 BZX55C 5V6 BZX55C 6V2 BZX55C 6V8 BZX55C 7V5 BZX55C 8V2 BZX55C 9V1 BZX55C 10 BZX55C 11 BZX55C 12 BZX55C 13 BZX55C 15 BZX55C 16 BZX55C 18 BZX55C 20 BZX55C 22 BZX55C 24 BZX55C 27 BZX55C 30 BZX55C 33 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 TA = 25°C unless otherwise noted VZ (V) MAX 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.1 23.3 25.6 28.9 32.0 35.0 (Ω ) 85 85 85 75 60 35 25 10 8.0 7.0 7.0 10 15 20 20 26 30 40 50 55 55 80 80 80 80 ZZ @ IZT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 ZZK (Ω ) 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 @ IZT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 @ (µ A) 2.0 2.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 IR @ (µ A) TA= 150°C 40 40 40 20 10 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 IR (%/°C) - 0.060 - 0.055 - 0.050 - 0.040 - 0.020 +0.010 +0.025 +0.032 +0.040 +0.045 +0.048 +0.050 +0.055 +0.060 +0.065 0.070 0.070 0.075 0.075 0.080 0.080 0.080 0.085 0.085 0.085 TC IZM (mA) 115 105 95 90 85 80 70 64 58 53 47 43 40 36 32 29 27 24 21 20 18 16 14 13 12 VF Foward Voltage = 1.0 V Maximum @ IF = 100 mA for all BZX 55 series ã 1997 Fairchild Semiconductor Corporation