F5D2

F5D1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION • The F5D series is a 880 nm LED in a narrow angle, TO-46 package. 0.030 (0.76) NOM 0.255 (6.48) FEATURES 1.00 (25.4) MIN • Good optical to mechanical alignment ANODE (CASE) • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level SCHEMATIC ANODE (Connected To Case) CATHODE 3 0.100 (2.54) 0.050 (1.27) 1 1 0.040 (1.02) 0.040 (1.02) 45° 3 Ø0.020 (0.51) 2X NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 10µs; 100Hz) Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF IF VR PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 3 10 3 170 1.3 Unit °C °C °C °C mA A A V mW W ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) (All measurements made under pulse conditions) MIN TYP MAX UNITS SYMBOL Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power F5D1(7) Total Power F5D2(7) Total Power F5D3(7) Rise Time 0-90% of output Fall Time 100-10% of output IF = 100 mA IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA "P # VF IR PO PO PO tr tf — — — — 12.0 9.0 10.5 — — 880 ±8 — — — — — 1.5 1.5 — — 1.7 10 — — — — — nm Deg. V µA mW mW mW µs µs  2001 Fairchild Semiconductor Corporation DS300286 4/24/01 1 OF 3 www.fairchildsemi.com F5D1/2/3 AlGaAs INFRARED EMITTING DIODE Figure 1. Power Output vs. Input Current 10 PO, NORMALIZED POWER OUTPUT PO, NORMALIZED POWER OUTPUT 20 10 8 6 4 2 IF = 100 mA 1 0.8 0.6 0.4 0.2 0.1 -25 NORMALIZED TO I F = 100 mA, TA = 25°C PW = 80 µsec, f = 30 Hz 0 25 50 75 , 100 125 150 Figure 2. Power Output vs. Temperature IF = 1 A 1.0 0.1 NORMALIZED TO I F = 100 mA TA = 25°C PULSED INPUTS PW = 80 µsec RR = 30 Hz 10 100 1000 0.01 0.001 1 IF, INPUT CURRENT (mA) TA, AMBIENT TEMPERATURE (°C) Figure 3. Forward Voltage vs. Temperature 4 IF = 1 A PW = 80 µsec F = 30 Hz PO, RELATIVE OUTPUT (%) 100 Figure 4. Typical Radiation Pattern VF, FORWARD VOLTAGE (volts) 3 80 F5D 60 IF = 0.5 A 2 IF = 100 mA IF = 10 mA 40 20 1 -25 0 25 50 75 100 125 150 0 -80 -60 -40 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) θ, DISPLACEMENT FROM OPTICAL AXIS (DEGREES) Figure 5. Output vs. Input with L14G Detector 100 IF IL L14G 5V F5D1 Figure 6. Output vs. Wavelength 120 100 PO, RELATIVE OUTPUT (%) 80 60 40 20 IF = 100 mA TA = 25°C IL, OUTPUT CURRENT (mA) 10 1.0 TYPICAL OUPUTS AT A DISTANCE OF 10 CM PULSED INPUTS, P W = 80 µsec RR = 30 Hz TYPICAL SPECTRAL RESPONSE OF SILICON PHOTOSENSORS F5D 0.1 0.01 10 100 IF , INPUT CURRENT (mA) 1000 700 800 900 1000 λ, WAVE LENGTH (nm) www.fairchildsemi.com 2 OF 3 4/24/01 DS300286 F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300286 4/24/01 3 OF 3 www.fairchildsemi.com