FAN7371MX

FAN7371 — High-Current High-Side Gate Drive IC November 2009 FAN7371 High-Current High-Side Gate Drive IC Features ! Floating Channel for Bootstrap Operation to +600V ! 4A/4A Sourcing/Sinking Current Driving Capability ! Common-Mode dv/dt Noise Canceling Circuit ! 3.3V and 5V Input Logic Compatible ! Output In-phase with Input Signal ! Under- Voltage Lockout for VBS ! 25V Shunt Regulator on VDD and VBS ! 8-Lead Small Outline Package (SOP) Description The FAN7371 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. The high-current and low-output voltage drop feature makes this device suitable for sustaine switch driver and energy recovery switch driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. 8-SOP Applications ! High-Speed Gate Driver ! Sustaine Switch Driver in PDP Application ! Energy-Recovery Circuit Switch Driver in PDP Application ! High-Power Buck Converter ! Motor Drive Inverter Ordering Information Part Number FAN7371M(1) FAN7371MX(1) Package 8-SOP Operating Temperature Range -40°C ~ 125°C Eco Status RoHS Packing Method Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Typical Application Diagrams 15V VS 15V RBOOT1 DBOOT1 Q3 R3 R4 L1 5 CBOOT1 R1 DBOOT2 R2 Q1 8 7 6 5 C2 R5 CBOOT2 R6 R8 4 GND NC 5 6 Q2 Q4 R7 D1 D2 D4 CBOOT3 D3 8 7 6 5 DBOOT3 RBOOT3 FAN7371 8 VB 7 6 HO VS NC VDD 1 IN 2 FAN7371 1 VDD IN VB HO VS NC IN3 NC 3 GND 4 IN1 2 3 NC 4 GND To Pannel FAN7371 1 VDD IN VB HO VS FAN7371 8 VB 7 HO VS NC VDD 1 IN 2 C3 IN2 C1 2 IN4 3 NC NC 3 GND 4 Energy Recovery Circuit Part Sustain Drive Part FAN7371 Rev.03 Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application 15V RBOOT DBOOT VIN FAN7371 1 VDD PWM C1 VB 8 HO R1 2 IN 3 NC 4 GND 7 CBOOT R2 L1 VS 6 NC 5 D1 C2 VOUT FAN7371 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 2 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Internal Block Diagram VDD GND 1 25V VDD UVLO Shoot-through current compensated gate driver 8 VB 4 PULSE GENERATOR IN 2 110K NOISE CANCELLER R S R Q 7 25V HO 6 Pins 3 and 5 are no connection. FAN7371 Rev.04 VS Figure 3. Functional Block Diagram Pin Configuration VDD IN NC GND 1 2 3 4 8 VB HO VS NC FAN7371 7 6 5 FAN7371 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # 1 2 3 4 5 6 7 8 Name VDD IN NC GND NC VS HO VB Supply Voltage Description Logic Input for High-Side Gate Driver Output No Connection Ground No Connection High-Voltage Floating Supply Return High-Side Driver Output High-Side Floating Supply © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 3 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol VS VB VHO VDD VIN dVS/dt PD θJA TJ TSTG TA Notes: 2 Characteristics High-Side Floating Offset Voltage High-Side Floating Supply Voltage(2) High-Side Floating Output Voltage Low-Side and Logic Supply Voltage Logic Input Voltage Allowable Offset Voltage Slew Rate Power Dissipation(3, 4, 5) Thermal Resistance Junction Temperature Storage Temperature Operating Ambient Temperature (2) Min. VB-VSHUNT -0.3 VS-0.3 -0.3 -0.3 Max. VB+0.3 625.0 VB+0.3 VSHUNT VDD+0.3 ± 50 0.625 200 Unit V V V V V V/ns W °C/W °C °C °C -55 -55 -40 +150 +150 +125 3 4 5 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol VBS VS VHO VIN VDD Parameter High-Side Floating Supply Voltage High-Side Floating Supply Offset Voltage High-Side Output Voltage Logic Input Voltage Supply Voltage Min. VS+10 6-VDD VS GND 10 Max. VS+20 600 VB VDD 20 Unit V V V V V © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 4 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Electrical Characteristics VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Test Condition VIN=0V or 5V fIN=20KHz, No Load VBS=Sweep VBS=Sweep VBS=Sweep VB=VS=600V VIN=0V or 5V CLOAD=1nF, fIN=20KHz, rms Value ISHUNT=5mA Min. Typ. Max. Unit 25 35 70 100 μA μA POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current IPDD VBSUV+ Operating VDD Supply Current BOOTSTRAPPED SUPPLY SECTION VBS Supply Under-Voltage Positive Going Threshold Voltage VBS Supply Under-Voltage Negative Going VBSUVThreshold Voltage VBS Supply Under-Voltage Lockout VBSHYS Hysteresis Voltage ILK Offset Supply Leakage Current IQBS IPBS Quiescent VBS Supply Current Operating VBS Supply Current 8.2 7.5 9.2 8.5 0.7 10 60 1.0 120 2.8 10.2 9.5 V V V μA μA mA SHUNT REGULATOR SECTION V and VBS Shunt Regulator Clamping VSHUNT DD Voltage INPUT LOGIC SECTION VIH Logic “1” Input Voltage VIL IIN+ IINRIN Logic “0” Input Voltage Logic Input High Bias Current Logic Input Low Bias Current 24 25 V 2.5 0.8 VIN=5V VIN=0V 70 No Load No Load VHO=0V, VIN=5V, PW ≤10µs VHO=15V,VIN=0V, PW ≤10µs 3.0 3.0 4.0 4.0 -9.8 -7.0 110 1.2 30 45 70 2 V V μA μA KΩ V mV A A V Input Pull-down Resistance GATE DRIVER OUTPUT SECTION High Level Output Voltage (VBIAS - VO) VOH VOL IO+ IOVS Low Level Output Voltage Output High, Short-Circuit Pulsed Current(6) Output Low, Short-Circuit Pulsed Allowable Negative VS pin Voltage for IN Signal Propagation to HO Current(6) Note: 6 These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified. Symbol ton toff tr tf . Parameter Turn-on Propagation Delay Time Turn-off Propagation Delay Time Turn-on Rise Time Turn-off Fall Time VS=0V VS=0V Conditions Min. Typ. 150 150 25 15 Max. 210 210 50 40 Unit ns ns ns ns © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 5 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics 250 200 250 200 tON [ns] 150 100 50 0 -40 tOFF [ns] -20 0 20 40 60 80 100 120 150 100 50 0 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 5. Turn-on Propagation Delay vs. Temperature Figure 6. Turn-off Propagation Delay vs. Temperature 50 40 50 40 30 20 10 0 -40 tR [ns] 20 10 0 -40 -20 0 20 40 60 80 100 120 tF [ns] 30 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 7. Turn-on Rise Time vs. Temperature Figure 8. Turn-off Fall Time vs. Temperature 100 80 60 40 20 0 -40 2.0 1.5 IPBS [mA] -20 0 20 40 60 80 100 120 IPDD [μA] 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 9. Operating VDD Supply Current vs. Temperature Figure 10. Operating VBS Supply Current vs. Temperature © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 6 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) 10.0 9.5 9.5 9.0 VBSUV+ [V] VBSUV- [V] 9.0 8.5 8.5 8.0 8.0 -40 -20 0 20 40 60 80 100 120 7.5 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 11. VBS UVLO+ vs. Temperature Figure 12. VBS UVLO- vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 VIH [V] -20 0 20 40 60 80 100 120 VIL [V] -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 13. Logic High Input Voltage vs. Temperature Figure 14. Logic Low Input Voltage vs. Temperature 280 240 200 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -40 RIN [kΩ] 160 120 80 40 0 -40 -20 0 20 40 60 80 100 120 VOH [V] -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 15. Input Pull-Down Resistance vs.Temperature. © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 7 Figure 16. High-Level Output Voltage vs. Temperature www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) 6.5 6.0 5.5 5.0 6.5 6.0 5.5 5.0 IO+ [A] 4.5 4.0 3.5 3.0 2.5 -40 -20 0 20 40 60 80 100 120 IO- [A] 4.5 4.0 3.5 3.0 2.5 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 17. Output High, Short-Circuit Pulsed Current vs. Temperature Figure 18. Output Low, Short-Circuit Pulsed Current vs. Temperature 7 6 5 4 3 2 10 7 6 5 4 3 2 10 IO+ [A] 12 14 16 18 20 IO- [A] 12 14 16 18 20 VBS [V] VBS [V] Figure 19. Output High, Short-Circuit Pulsed Current vs. Supply Voltage Figure 20. Output Low, Short-Circuit Pulsed Current vs. Supply Voltage 80 120 100 60 IQDD [μA] IQBS [μA] -40°C 40 25°C 20 125°C 80 60 125°C 40 20 -40°C 25°C 0 10 12 14 16 18 20 0 10 12 14 16 18 20 Supply Voltage [V] Supply Voltage [V] Figure 21. Quiescent VDD Supply Current vs. Supply Voltage Figure 22. Quiescent VBS Supply Current vs. Supply Voltage © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 8 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Switching Time Definitions Timing Diagram 15V 50% 50% VDD 10nF 10µF VB 10µF 0.1µF 15V IN ton tr toff tf VS GND FAN7371 1000pF 90% 90% IN HO OUT (A) 10% 10% (B) Figure 23. Switching Time Test Circuit and Waveform Definitions © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 9 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC Physical Dimensions 5.00 4.80 3.81 8 5 A 0.65 B 6.20 5.80 4.00 3.80 1 4 1.75 5.60 PIN ONE INDICATOR (0.33) 1.27 0.25 M CBA 1.27 LAND PATTERN RECOMMENDATION 0.25 0.10 1.75 MAX C 0.10 0.51 0.33 0.50 x 45° 0.25 C SEE DETAIL A 0.25 0.19 OPTION A - BEVEL EDGE R0.10 R0.10 GAGE PLANE 0.36 OPTION B - NO BEVEL EDGE NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 8° 0° 0.90 0.406 (1.04) DETAIL A SCALE: 2:1 SEATING PLANE Figure 24. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 10 www.fairchildsemi.com FAN7371 — High-Current High-Side Gate Drive IC © 2008 Fairchild Semiconductor Corporation FAN7371 Rev. 1.0.2 12 www.fairchildsemi.com