FCB20N60F

FCB20N60F 600V NCHANNEL FRFET December 2006 SuperFET FCB20N60F 600V NCHANNEL FRFET Feat es ur • 650V @ TJ = 150° C • Ty Rds on) 15 p. ( =0. • Fas Recov Ty (trr = 160ns) t ery pe • Ultra low gate charge ( p.Qg=75nC) ty • Low ef f ectiv output capacitance ( p.Cos . f e ty sef =165pF) • 100% av alanche tes ted TM Descrpton ii SuperFETTM is Farichild’ proprietary new generation ofhigh , s , v oltage MOSFET f amily that is utiliz ing an adv anced charge balance mechanis f outs m or tanding low on- is res tance and lower gate charge perf ormance. This adv anced technology has been tailored to minimiz e conduction los ,prov s s ide uperior s witching perf ormance,and withs tand ex treme dvdt rate and higher av / alanche energy . Cons equently SuperFET is v , ery s uitable f v or arious AC/ DC power conv ion in s ers witching mode operation f s s or y tem miniaturiz ation and higher ef f iciency . D D G G S S Absol e Maxi um Ratngs ut m i Sym bol VDSS ID IDM VGSS EAS IAR EAR dv dt / PD TJ,TSTG TL DrainSource Voltage Drain Current Drain Current GateSource v oltage Single Puls Av ed alanche Energy Av alanche Current Repetitiv Av e alanche Energy PeakDiode Recov dvdt ery / Power Dis ipation s ( C = 25 C) T -Derate abov 25 C e ( Note 2) ( Note 1 ) ( Note 1 ) ( Note 3 ) Par et am er -Continuous( C = 25 C) T -Continuous( C = 100 C) T -Puls ed ( Note 1 ) FCB20N60F 600 20 12. 5 60 30 690 20 20. 8 50 208 1. 67 - to +150 55 300 Uni t V A A A V mJ A mJ V/ ns W W/C C C Operating and Storage Temperature Range Max imum Lead Temperature f Soldering Purpos or e, 1/ f 8” rom Cas f 5 Seconds e or Ther alChar erstcs m act i i Sym bol R R R JC JA* JA Par et am er Thermal Res tance,Junction- Cas is to- e Thermal Res tance,Junction- Ambient* is toThermal Res tance,Junction- Ambient is to- FCB20N60F 0. 6 40 62. 5 Uni t C/ W C/ W C/ W * When mounted on the minimum pad s e recommended ( iz PCB Mount) ©2006 Fairchild Semiconductor Corporation 1 www.airchilds f emi. com FCB20N60F Rev A2 . FCB20N60F 600V N-CHANNEL FRFET Package Marking and Ordering I ormation nf Device Marking FCB20N60F Device FCB20N60FTM Package D2-Pak Reel Siz e 330mm Tape W idth 24m Quantity 800 Electrical Characteristics Symbol Of Characteristics f BVDSS BVDSS TJ TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250 A, TJ = 25 C VGS = 0V, ID = 250 A, TJ = 150 C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----10 100 100 -100 V V V/ C V A A nA nA / Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250 A, Referenced to 25 C VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250 A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.15 17 5.0 0.19 -S V Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 62 140 230 65 75 13.5 36 135 290 470 140 98 18 -- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating:Pulse width limited by maximum j unction temperature 2. IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25 C 3. ISD 20A, di/dt 1200A/ s, VDD BVDSS, Starting TJ = 25 C 2% 4. Pulse Test:Pulse width 300 s, Duty Cycle Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/ s (Note 4) ------ ---160 1.1 20 60 1.4 --- A A V ns C 5. Essentially Independent of Operating Temperature Typical Characteristics FCB20N60F Rev. A2 2 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics Figure 1.On-Region Characteristics 10 2 Figure 2.Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 10 1 ID , Drain Current [ A] ID, Drain Current [ A] 10 1 150 C o 25 C -55 C 10 0 o o 10 0 * Notes : 1. 250 s Pulse Test 2. TC = 25 C o * Note: 1. VDS = 40V 2. 250 s Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [ V] VGS , Gate-Source Voltage [ V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 Figure 4.Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [ A] 0.4 Drain-Source On-Resistance 0.3 RDS(ON) [ ] , VGS = 10V 10 1 0.2 VGS = 20V 0.1 10 0 150 C o 25 C * Notes : 1. VGS = 0V 2. 250 s Pulse Test o * Note : TJ = 25 C o 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [ A] VSD , Source-Drain Voltage [ V] Figure 5.Capacitance Characteristics 10000 Ciss = Cgs + Cgd (Cds = shorted) Figure 6.Gate Charge Characteristics 12 9000 8000 Coss = Cds + Cgd VDS = 100V VGS, Gate-Source Voltage [ V] Crss = Cgd 10 VDS = 250V VDS = 400V Capacitance [ pF] 7000 6000 5000 4000 * Notes : 1. VGS = 0 V 8 Coss 6 Ciss 3000 2000 1000 0 -1 10 2. f = 1 MHz 4 2 * Note : ID = 20A Crss 10 0 10 1 0 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [ V] QG, Total Gate Charge [ nC] FCB20N60F Rev. A2 3 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 20 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 10 2 Operation in This Area is Limited by R DS(on) 20 ID, Drain Current [A] 10 1 1 ms 10 ms DC ID, Drain Current [A] 3 100 s 15 10 0 10 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 5 10 -2 10 0 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 Z JC(t), Thermal Response 0 .2 10 -1 * N o te s : 1. Z JC 0 .1 0 .0 5 0 .0 2 (t) = 0 .6 C /W M a x. (t) o 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z JC PDM t1 t2 10 -2 0 .0 1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCB20N60F Rev. A2 4 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCB20N60F Rev. A2 5 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Peak Diode Recovery dv/ Test Circuit & Waveforms dt FCB20N60F Rev. A2 6 www.fairchildsemi.com FCB20N60F 600V N-CHANNEL FRFET Mechanical Dimensions D2PAK (0.4 0) 9 .9 0 0.2 0 4 .5 0 0.2 0 1.3 0 – 0.05 + 0.10 0.2 0 1.2 0 0.2 0 0.2 0 9 .2 0 0.3 0 0.10 0.10 0.15 0.3 0 15 .3 0 1.4 0 2 .00 4 .9 0 0.2 0 (0.7 5 ) 1.2 7 0.10 0.8 0 0.10 0 ~3 + 0.10 2 .5 4 T Y P 2 .5 4 T Y P 10.00 0.2 0 (8 .00) (4 .4 0) 0.5 0 – 0.05 10.00 0.2 0 (1.7 5 ) (7 .2 0) 0.8 0 4 .9 0 0.10 0.2 0 0.3 0 (2 X R 0.4 5 ) 15 .3 0 Dimensions in Millimeters FCB20N60F Rev. A2 7 9 .2 0 www.fairchildsemi.com 0.2 0 2 .5 4 2 .4 0 0.2 0 FAI RCHI SEMI LD CONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an ex haustiv list of all such trademarks. e ACEx ™ Activ eArray ™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i™ Lo ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROW IRE™ MSX™ MSXPro™ Across the board.Around the world. ™ The Power Franchise® Programmable Activ Droop™ e OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSav er™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SW ITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™3 SuperSOT™6 SuperSOT™8 Sy ncFET™ TCM™ Tiny Boost™ Tiny Buck™ Tiny M™ PW Tiny Power™ Tiny Logic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ W ire™ DI SCLAI MER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES W ITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, DESIGN. 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As used herein: 1.Life support dev ices or sy stems are dev ices or sy stems which, ( are intended for surgical implant into the body or ( support or a) , b) sustain life,or ( whose failure to perform when properly used in c) accordance with instructions for use prov ided in the labeling, can be reasonably ex pected to result in significant inj to the user. ury 2. critical component is anycomponent of a life support dev or A ice sy stem whose failure to perform can be reasonably ex pected to cause the failure of the life support dev or sy ice stem, to affect its or safety or effectiv eness. PRODUCT STATUS DEFI TI NI ONS Definition of Terms Datasheet I dentification Adv ance Information Pr o duct St at us Formativ or In Design e Definition This datasheet contains the design specifications for product dev elopment.Specifications may change in any manner without notice. This datasheet contains preliminary data,and supplementary data will be published at a later date. Fairchild Semiconductor reserv the right to make es changes at any time without notice to improv e design. This datasheet contains final specifications.Fairchild Semiconductor reserv the right to make changes at es any time without notice to improv design. e This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only . Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22