FCD5N60TF

FCD5N60/FCU5N60 600V N-Channel MOSFET July 2006 SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D G G S D-PAK FCD Series GDS I-PAK FCU Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCD5N60 / FCU5N60 600 4.6 2.9 13.8 ± 30 2.9 4.6 5.4 20 54 0.43 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCD5N60/FCU5N60 2.3 83 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCD5N60/FCU5N60 Rev. A0 FCD5N60/FCU5N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCD5N60 FCD5N60 FCU5N60 Device FCD5N60TM FCD5N60TF FCU5N60 Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm -- Tape Width 16mm 16mm -- Quantity 2500 2000 70 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 4.6A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----0.81 3.8 470 250 22 12 32 12 40 47 22 16 2.8 7 Max Units ----1 10 100 -100 5.0 0.95 -600 320 ---30 90 95 55 ---V V V/°C V µA µA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 4.6A RG = 25Ω Switching Characteristics ----- VDS = 480V, ID = 4.6A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 4.6A VGS = 0V, IS = 4.6A dIF/dt =100A/µs (Note 4) ------ ---295 2.7 4.6 13.8 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCD5N60/FCU5N60 Rev. A0 2 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics ID, Drain Current [A] 10 1 ID , Drain Current [A] 10 1 150 C o o 10 0 10 0 25 C -55 C * Note 1. VDS = 40V 2. 250µs Pulse Test o 10 -1 * Notes : 1. 250µs Pulse Test o 2. TC = 25 C 10 10 -1 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.0 Drain-Source On-Resistance 2.5 2.0 VGS = 10V ID , Drain Current [A] 10 1 RDS(ON) [Ω], 150 C o o 1.5 10 0 25 C -55 C * Note 1. VDS = 40V 2. 250µs Pulse Test o VGS = 20V 1.0 * Note : TJ = 25 C o 0.5 0.0 2.5 5.0 7.5 10.0 12.5 15.0 10 -1 ID, Drain Current [A] 2 4 6 8 10 VGS , Gate-Source Voltage [V] Figure 5. Capacitance Characteristics 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] Crss = Cgd *Notes : 1. VGS = 0 V 2. f = 1 MHz 10 VDS = 250V VDS = 400V Capacitance [pF] 1000 8 Coss 6 500 Ciss 4 Crss 0 0 10 2 * Note : ID = 4.6A 0 10 1 0 5 10 15 o VDS, Drain-Source Voltage [V] QG, Total Gate Charge [ C] FCD5N60/FCU5N60 Rev. A0 3 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 1.0 * Notes : 1. VGS = 10V 2. ID = 2.3A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 5 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms ID, Drain Current [A] 10 3 10 1 10 µs 4 3 10 0 DC * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 2 10 -1 1 10 -2 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve (t), Thermal Response D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 * N o te s : 1 . Z θJC (t) = 3. T JM 2 .3 = P o C /W *Z M ax. (t) 2 . D u ty F a c to r , D = t1/t2 -T C DM θJC 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 Z θJC 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, S q u a re W ave P u ls e D u r a t io n [s e c ] FCD5N60/FCU5N60 Rev. A0 4 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCD5N60/FCU5N60 Rev. A0 5 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCD5N60/FCU5N60 Rev. A0 6 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FCD5N60/FCU5N60 Rev. A0 7 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Package Dimensions (Continued) I-PAK Dimensions in Millimeters FCD5N60/FCU5N60 Rev. A0 8 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FCD5N60/FCU5N60 Rev. A0 9 www.fairchildsemi.com