FCH25N60N

FCH25N60N N-Channel MOSFET FCH25N60N Features SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSF ET fits the industry’ s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A • Ultra Low Gate Charge ( Typ. Qg = 57nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D G GD S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* VGSS ID EAS EAR IDM Symbol VDSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) (Note 3) Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 (Note 1) (Note 2) 75 861 8.3 2.2 20 100 216 1.72 -55 to +150 300 Units V V A A mJ A mJ V/ns W/oC o o Pulsed Continuous (TC = 100oC) IAR dv/dt PD TJ, TSTG TL Derate above 25oC W Thermal Characteristics Symbol RθJC RθCS RθJA *Drain current limited by maximum junction temperature Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient 1 FCH25N60N 0.58 0.24 40 Units o C/W ©2011 Fairchild Semiconductor Corporation FCH25N60N Rev. A2 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FCH25N60N Device FCH25N60N Package TO247 Reel Size Tape Width Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions ID = 1mA, VGS = 0V,TJ = 25oC ID = 1mA, Referenced to 25 C VDS = 480V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 480V, TJ = 125oC o Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current 600 0.74 10 100 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = 10V, ID = 12.5A VDS = 20V, ID = 12.5A VGS = VDS, ID = 250μA 2.0 0.108 4.0 0.126 V Ω S Dynamic Characteristics Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) Coss Crss Coss VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V VDS = 380V, ID = 12.5A, VGS = 10V Drain Open, f=1MHz (Note 4) 2520 103 3.2 55 262 57 10 18 1 3352 137 5 74 - pF pF pF pF pF nC nC nC Ω Cosseff. Qgs Qg(tot) Qgd ESR - Switching Characteristics tr tf td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 12.5A RG = 4.7Ω (Note 4) - 21 22 68 5 52 54 146 20 ns ns ns ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 12.5A VGS = 0V, ISD = 12.5A dIF/dt = 100A/μs 370 7 25 75 1.2 A A V ns μC ISM trr VSD Qrr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 25A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCH25N60N Rev. A2 2 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15V 10V 8V 6V 4V Figure 2. Transfer Characteristics 100 ID, Drain Current[A] ID, Drain Current[A] 10 25 C o 10 150 C o -55 C o 1 *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 0.3 0.05 0.1 1 10 VDS, Drain-Source Voltage[V] 30 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 350 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [mΩ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 300 150 C o 250 10 200 25 C o VGS = 10V VGS = 20V 150 100 *Note: TC = 25 C o *Notes: 1. VGS = 0V 0 20 40 60 ID, Drain Current [A] 80 1 0.4 2. 250μs Pulse Test 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 10 5 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] Coss 10 Capacitances [pF] 4 8 Ciss VDS = 120V VDS = 300V VDS = 480V 10 3 6 Crss 10 2 10 1 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4 2 *Note: ID = 12.5A 10 0 0.1 1 10 100 VDS, Drain-Source Voltage [V] 600 0 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 FCH25N60N Rev. A2 3 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 12.5A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 100 100μs 10μs Figure 10. Maximum Drain Current vs. Case Temperature 30 25 ID, Drain Current [A] 20 15 10 5 0 25 ID, Drain Current [A] 10 DC 1ms 10ms 1 Operation in This Area is Limited by RDS(on) *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZθJC] 0.5 0.2 0.1 0.05 0.02 0.1 PDM t1 t2 o 0.01 0.01 *Notes: Single pulse 1E-3 -5 10 1. ZθJC(t) = 0.58 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t) 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FCH25N60N Rev. A2 4 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH25N60N Rev. A2 5 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V I SD ( DUT ) IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FCH25N60N Rev. A2 6 www.fairchildsemi.com FCH25N60N N-Channel MOSFET Mechanical Dimensions TO-247-3L Dimensions in Millimeters FCH25N60N Rev. A2 7 www.fairchildsemi.com FCH25N60N N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ The Power Franchise® AccuPower™ PowerTrench® FRFET® PowerXS™ The Right Technology for Your Success™ Auto-SPM™ ® Programmable Active Droop™ Global Power ResourceSM Build it Now™ QFET® Green FPS™ CorePLUS™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyBoost™ Quiet Series™ CROSSVOLT™ Gmax™ TinyBuck™ RapidConfigure™ CTL™ GTO™ TinyCalc™ Current Transfer Logic™ IntelliMAX™ ™ TinyLogic® DEUXPEED® ISOPLANAR™ TINYOPTO™ Saving our world, 1mW/W/kW at a time™ Dual Cool™ MegaBuck™ TinyPower™ SignalWise™ EcoSPARK® MICROCOUPLER™ TinyPWM™ EfficentMax™ SmartMax™ MicroFET™ TinyWire™ ESBC™ SMART START™ MicroPak™ TriFault Detect™ SPM® MicroPak2™ ® TRUECURRENT™* STEALTH™ MillerDrive™ μSerDes™ SuperFET® MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® ® Ultra FRFET™ ® OPTOPLANAR SupreMOS FAST ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 FCH25N60N Rev. A2 8 www.fairchildsemi.com