FCH47N60N 600V N-Channel MOSFET
SupreMOS
FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ Features
• 650V @TJ = 150 C • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant
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December 2011
TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
G GD S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) Ratings 600 ±30 47 29.7 141 3068 15.7 3.7 100 20 368 2.94 -55 to +150 300 Units V V A A mJ A mJ V/ns V/ns W W/oC
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Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient Ratings 0.34 0.24 40
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Units C/W
©2010 Fairchild Semiconductor Corporation FCH47N60N Rev. C1
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FCH47N60N 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FCH47N60N Device FCH47N60N Package TO-247 Reel Size Tape Width Quantity 30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V 25oC 600 0.78 10 100 ±100 V V/oC μA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 23.5A VDS = 40V, ID = 23.5A 2 51.5 56 4 62.0 V mΩ S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance(G-S) VDS = 380V, ID = 23.5A, VGS = 10V
(Note 4)
VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 380V, VGS = 0V
-
5037 200 2.5 108 511 115 21 34 0.9
6700 270 4.0
pF pF pF pF pF
151
nC nC nC Ω
Drain Open
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 23.5A RGEN = 4.7Ω
(Note 4)
-
11 9 135 22
32 28 280 54
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 23.5A VGS = 0V, ISD = 23.5A dIF/dt = 100A/μs 495 12 47 141 1.2 A A V ns μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15.7A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60N Rev. C1
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FCH47N60N 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
VGS = 15V 10V 8V 6V 5V
Figure 2. Transfer Characteristics
500
100
ID, Drain Current[A]
ID, Drain Current[A]
100
150 C 25 C
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10
10
-55 C *Notes: 1. VDS = 20V 2. 250μs Pulse Test
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*Notes: 1. 250μs Pulse Test 2. TC = 25 C
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1 0.1
1 10 VDS, Drain-Source Voltage[V]
30
1
2
4 6 VGS, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
140
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
RDS(ON) [mΩ], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
120
100
150 C
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100
VGS = 10V
80
VGS = 20V
25 C
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10
60
*Note: TC = 25 C
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*Notes: 1. VGS = 0V
2. 250μs Pulse Test
40 0 40 80 120 ID, Drain Current [A] 160
1 0.4
0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
10
5
Figure 6. Gate Charge Characteristics
10
Coss
VGS, Gate-Source Voltage [V]
10 Capacitances [pF]
4
8
Ciss
VDS = 120V VDS = 300V VDS = 480V
10
3
6
Crss
10
2
*Note: 1. VGS = 0V 2. f = 1MHz Coss = Cds + Cgd Crss = Cgd
4
10 Ciss = Cgs + Cgd (Cds = shorted)
2
*Note: ID = 23.5A
1 0.1
1 10 100 VDS, Drain-Source Voltage [V]
600
0
0
30 60 90 Qg, Total Gate Charge [nC]
120
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FCH47N60N 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 23.5A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current vs. Case Temperature
50
ID, Drain Current [A]
100
100μs
10μs
40
10
10ms DC
1ms
ID, Drain Current [A]
30
1
Operation in This Area is Limited by RDS(on) *Notes:
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20
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZθJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
0.01
0.02 0.01 Single pulse
*Notes: 1. ZθJC(t) = 0.24 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t)
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0.001 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
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4
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FCH47N60N 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60N Rev. C1
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FCH47N60N 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
• dv/dt controlled by RG • ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
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6
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FCH47N60N 600V N-Channel MOSFET
Mechanical Dimensions
TO-247
FCH47N60N Rev. C1
7
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FCH47N60N 600V N-Channel MOSFET
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Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I61
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
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