FCH47N60_07

FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET August 2007 SuperFET FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.058Ω • Ultra low gate charge (typ. Qg=210nC) • Low effective output capacitance (typ. Coss.eff=420pF) • 100% avalanche tested TM Description SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G GD S TO-247 FDH Series TO-3P G DS FDA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCH47N60 600 FCA47N60 Unit V A A A V mJ A mJ V/ns W W/°C °C °C 47 29.7 141 ± 30 1800 47 41.7 4.5 417 3.33 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ. -0.24 -- Max. 0.3 -41.7 Unit °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 Rev.B2 FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCH47N60 FCA47N60 FCA47N60 Device FCH47N60 FCA47N60 FCA47N60_F109 Package TO-247 TO-3P TO-3PN TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 30 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 47A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 23.5A VDS = 40V, ID = 23.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----0.058 40 5900 3200 250 160 420 185 210 520 75 210 38 110 Max Units ----1 10 100 -100 5.0 0.07 -8000 4200 ---430 450 1100 160 270 --V V V/°C V µA µA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 47A RG = 25Ω Switching Characteristics ----- VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 47A VGS = 0V, IS = 47A dIF/dt =100A/µs (Note 4) ------ ---590 25 47 141 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 2 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID , Drain Current [A] 10 2 150℃ 1 10 1 10 25℃ -55℃ ※ Note 1. VDS = 40V 2. 250µ s Pulse Test 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 10 0 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [Ω ],Drain-Source On-Resistance 0.20 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] 0.15 10 2 VGS = 10V 0.10 10 1 VGS = 20V 0.05 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 10 200 0 0.00 0 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 30000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 25000 10 VDS = 250V VDS = 400V Capacitance [pF] 20000 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 8 15000 6 Ciss 10000 4 5000 Crss 2 ※ Note : ID = 47A 0 -1 10 10 0 10 1 0 0 50 100 150 200 250 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 3 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 3.0 Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 47 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 10 2 Operation in This Area is Limited by R DS(on) 100 us 10 ms DC 40 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 3 1 ms 30 10 0 20 ※ Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 10. Transient Thermal Response Curve Zθ JC Thermal Response (t), D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 10 -2 ※ N o te s : 1 . Z θ J C t) = 0 .3 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( PDM t1 s in g le p u ls e 10 -4 0 .0 1 t2 10 -5 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 4 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 5 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 6 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 7 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 8 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 9 www.fairchildsemi.com FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2 www.fairchildsemi.com