FCH76N60N

FCH76N60N 600V N-Channel MOSFET FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features • 650V @TJ = 150 C • RDS(on) = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A • Ultra Low Gate Charge ( Typ.Qg = 218nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant o SupreMOS TM December 2011 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G GD S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) (Note 3) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) Ratings 600 ±30 76 48.1 228 8022 25.3 5.43 100 20 543 4.34 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient Ratings 0.23 0.24 40 o Units C/W ©2011 Fairchild Semiconductor Corporation FCH76N60N Rev. C1 1 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCH76N60N Device FCH76N60N Package TO-247 Reel Size Tape Width Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to VDS = 480V, VGS = 0V 25oC 600 0.73 10 100 ±100 V V/oC μA nA VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 38A VDS = 20V, ID = 38A 2.0 28 90 4.0 36 V mΩ S Dynamic Characteristics Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance(G-S) VDS = 380V, ID = 38A, VGS = 10V Drain Open VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 380V, VGS = 0V (Note 4) 9310 370 3.1 195 914 218 39 66 1 12385 495 5 285 - pF pF pF pF pF nC nC nC Ω - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 38A RGEN = 25Ω (Note 4) - 34 24 235 32 78 58 480 74 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 38A VGS = 0V, ISD = 38A dIF/dt = 100A/μs 612 16 76 228 1.2 A A V ns μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 76A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCH76N60N Rev. C1 2 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 300 VGS = 15V 10V 8V 6V 5.5V 5V 4.5V Figure 2. Transfer Characteristics 500 100 ID, Drain Current[A] ID, Drain Current[A] 100 o 150 C 25 C -55 C *Notes: 1. VDS = 20V 2. 250μs Pulse Test o o 10 *Notes: 1. 250μs Pulse Test 10 2 0.1 2. TC = 25 C o 1 VDS, Drain-Source Voltage[V] 10 20 1 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 50 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 400 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 45 100 o 40 VGS = 10V 150 C 25 C o 35 VGS = 20V 10 30 *Note: TC = 25 C o *Notes: 1. VGS = 0V 25 0 50 100 150 ID, Drain Current [A] 200 250 1 0.0 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics 10 5 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V Coss 10 Capacitances [pF] 4 Ciss Crss 8 10 3 6 10 2 *Note: 1. VGS = 0V 2. f = 1MHz Coss = Cds + Cgd Crss = Cgd 4 10 Ciss = Cgs + Cgd (Cds = shorted) 10 0.01 0 1 2 *Note: ID = 38A 0.1 1 10 100 VDS, Drain-Source Voltage [V] 600 0 0 60 120 180 Qg, Total Gate Charge [nC] 240 FCH76N60N Rev. C1 3 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 38A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 10μs Figure 10. Maximum Drain Current vs. Case Temperature 80 ID, Drain Current [A] 100 100μs 1ms 10 Operation in This Area is Limited by RDS(on) 10ms DC ID, Drain Current [A] 60 40 1 *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 20 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 0.3 Thermal Response [ZθJC] 0.1 0.5 0.2 0.1 PDM t1 t2 o 0.01 0.05 0.02 0.01 Single pulse *Notes: 1. ZθJC(t) = 0.21 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FCH76N60N Rev. C1 4 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH76N60N Rev. C1 5 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FCH76N60N Rev. C1 6 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET Mechanical Dimensions TO-247 FCH76N60N Rev. C1 7 www.fairchildsemi.com FCH76N60N 600V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCH76N60N Rev. C1 8 www.fairchildsemi.com