FCP13N60N

FCP13N60N / FCPF13N60NT N-Channel MOSFET FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258Ω Features • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G GDS TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) (Note 3) 116 0.93 300 -Continuous (TC = 25oC) - Pulsed 13 8.2 (Note 1) (Note 2) 39 235 4.3 1.16 100 20 33.8 0.27 -55 to +150 -Continuous (TC = 100oC) FCP13N60N FCPF13N60NT 600 ±30 13* 8.2* 39 Units V V A A mJ A mJ V/ns V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heak Sink ( Typical) Thermal Resistance, Junction to Ambient FCP13N60N FCPF13N60NT 1.07 0.5 62.5 3.7 0.5 62.5 o Units C/W ©2009 Fairchild Semiconductor Corporation FCP13N60N / FCPF13N60NT Rev. A 1 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Package Marking and Ordering Information Device Marking FCP13N60N FCPF13N60NT Device FCP13N60N FCPF13N60NT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V 25oC 600 0.73 10 100 ±100 V V/oC μA nA VDS = 480V, VGS = 0V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 6.5A VDS = 40V, ID = 6.5A 2.0 0.244 16.3 4.0 0.258 V Ω S Dynamic Characteristics Ciss Coss Crss Coss Cosseff Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) Drain Open VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V VDS = 380V,ID = 6.5A VGS = 10V (Note 4) - 1325 50 3 30 145 30.4 6.0 9.5 2.8 1765 65 5 39.5 - pF pF pF pF pF nC nC nC Ω Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 6.5A RG = 4.7Ω (Note 4) - 14.5 10.6 45 9.8 39 31.2 100 29.6 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 6.5A VGS = 0V, ISD = 6.5A dIF/dt = 100A/μs 287 3.5 13 39 1.2 A A V ns μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP13N60N / FCPF13N60NT Rev. A 2 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 40 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 60 ID, Drain Current[A] ID, Drain Current[A] 10 10 150 C o -55 C 25 C o o 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test *Notes: 1. 250μs Pulse Test 3 0.6 2. TC = 25 C o 1 VDS, Drain-Source Voltage[V] 10 20 0.2 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [Ω], Drain-Source On-Resistance 0.6 IS, Reverse Drain Current [A] 150 C o 25 C o 0.4 VGS = 10V 10 0.2 VGS = 20V 0.0 *Notes: TC = 25 C o *Notes: 1. VGS = 0V 0 10 20 30 ID, Drain Current [A] 40 1 0.4 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 50000 10000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 120V VDS = 380V VDS = 480V 8 Ciss Capacitances [pF] 1000 6 100 Coss 4 10 1 0.1 *Notes: 1. VGS = 0V 2. f = 1MHz Crss 2 *Notes: ID = 6.5A 0 600 1 10 100 VDS, Drain-Source Voltage [V] 0 10 20 30 Qg, Total Gate Charge [nC] 40 FCP13N60N / FCPF13N60NT Rev. A 3 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 6.5A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area _ FCP13N60N 100 10μs Figure 10. Maximum Safe Operating Area _ FCPF13N60NT 100 10μs ID, Drain Current [A] ID, Drain Current [A] 10 100μs 1ms 10ms 10 100μs 1ms 1 Operation in This Area is Limited by R DS(on) DC 1 Operation in This Area is Limited by R DS(on) 10ms DC o 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 0.01 0.1 10 100 VDS, Drain-Source Voltage [V] 1 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature 15 12 ID, Drain Current [A] 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 FCP13N60N / FCPF13N60NT Rev. A 4 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP13N60N 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM PDM *Notes: t1 t2 0.01 -5 10 t1 o 1. ZθJC(t) = t2 1.07 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -2 10 -4 10 10 Rectangular Pulse Duration [sec] -3 10 -1 Figure 13. Transient Thermal Response Curve _ FCPF13N60NT 5 Thermal Response [ZθJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: Single pulse 0.01 -5 10 1. ZθJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 o 10 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FCP13N60N / FCPF13N60NT Rev. A 5 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP13N60N / FCPF13N60NT Rev. A 6 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCP13N60N / FCPF13N60NT Rev. A 7 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP13N60N / FCPF13N60NT Rev. A 8 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters FCP13N60N / FCPF13N60NT Rev. A 9 www.fairchildsemi.com FCP13N60N / FCPF13N60NT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 FCP13N60N / FCPF13N60NT Rev. A 10 www.fairchildsemi.com