FCP4N60

FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) • 100% avalanche tested SuperFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. January 2007 TM D G GDS TO-220 FCP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCP4N60 600 3.9 2.5 11.7 ± 30 128 3.9 5.0 4.5 50 0.4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCP4N60 2.5 83 Unit °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCP4N60 Rev. A FCP4N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCP4N60 Device FCP4N60 Package TO-220 TC = 25°C unless otherwise noted Reel Size -- Tape Width -- Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C VGS = 0V, ID = 250μA, TJ = 150°C ID = 250μA, Referenced to 25°C VGS = 0V, ID = 3.9A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 2.0A VDS = 40V, ID = 2.0A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----1.0 3.2 415 210 19.5 12 32 16 45 36 30 12.8 2.4 7.1 ---277 2.07 Max Units ----1 10 100 -100 5.0 1.2 -540 275 -16 -45 100 85 70 16.6 --3.9 11.7 1.4 --V V V/°C V μA μA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 3.9A RG = 25Ω Switching Characteristics --------- VDS = 480V, ID = 3.9A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 3.9A VGS = 0V, IS = 3.9A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCP4N60 Rev. A 2 www.fairchildsemi.com FCP4N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS Top : 15.0 V 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] ID , Drain Current [A] 150 C o 1 10 0 25 C -55 C * Note 1. VDS = 40V 2. 250μs Pulse Test o o * Notes : 1. 250μs Pulse Test 0.1 2. TC = 25 C o 0.1 1 10 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω],Drain-Source On-Resistance 4 3 VGS = 10V 2 IDR , Reverse Drain Current [A] 10 1 10 0 1 VGS = 20V 150 C o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test o * Note : TJ = 25 C o 0 0.0 2.5 5.0 7.5 10.0 12.5 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 1200 Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 120V VGS, Gate-Source Voltage [V] 1000 10 VDS = 300V VDS = 480V Capacitance [pF] 800 * Notes : 1. VGS = 0 V 2. f = 1 MHz 8 600 Coss Ciss 6 400 4 200 2 * Note : ID = 3.9A Crss 0 0 10 10 1 0 0 5 10 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FCP4N60 Rev. A 3 www.fairchildsemi.com FCP4N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 0.9 *Notes : 1. VGS = 0 V 2. ID = 250μA 1.0 *Notes : 1. VGS = 10 V 2. ID = 2.0 A 0.5 0.8 -100 -50 0 50 100 ο 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 4 Operation in This Area is Limited by R DS(on) 10 1 10 us 100 us 1 ms ID, Drain Current [A] 3 ID, Drain Current [A] 10 0 10 ms DC * Notes : o 1. TC = 25 C 2. TJ = 150 C o 2 1 10 -1 3. Single Pulse 10 0 10 1 10 2 10 3 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11-1. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 * N o te s : 1 . Z θ J C (t) = 2 .5 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) o 10 -1 0 .0 2 0 .0 1 sin g le p u lse PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] FCP4N60 Rev. A 4 www.fairchildsemi.com FCP4N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP4N60 Rev. A 5 www.fairchildsemi.com FCP4N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCP4N60 Rev. A 6 www.fairchildsemi.com FCP4N60 600V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP4N60 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com