FDB52N20_08

FDB52N20 200V N-Channel MOSFET July 2008 FDB52N20 200V N-Channel MOSFET Features • 52A, 200V, RDS(on) = 0.049Ω @VGS = 10 V • Low gate charge ( typical 49 nC) • Low Crss ( typical 66 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G G S S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDB52N20 200 52 33 208 ±30 2520 52 35.7 4.5 357 2.86 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA* RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Min. ---- Max. 0.35 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB52N20 Rev. A FDB52N20 200V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDB52N20 Device FDB52N20TM Package D -PAK 2 Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 200V, VGS = 0V VDS = 160V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 26A VDS = 40V, ID = 26A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 200 ------ Typ. -0.2 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.041 35 5.0 0.049 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2230 540 66 2900 700 100 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160V, ID = 52A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 100V, ID = 52A RG = 25Ω -------- 53 175 48 29 49 19 24 115 359 107 68 63 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 52A VGS = 0V, IS = 52A dIF/dt =100A/µs (Note 4) ------ ---162 1.3 52 204 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDB52N20 Rev. A www.fairchildsemi.com FDB52N20 200V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 150°C 10 1 25°C -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 0 * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 -1 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.12 2 RDS(ON) [Ω], Drain-Source On-Resistance 0.08 VGS = 10V 0.06 IDR, Reverse Drain Current [A] 0.10 10 VGS = 20V 0.02 * Note : TJ = 25°C 0.00 0 25 50 75 100 125 150 10 0 0.2 0.4 0.6 0.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 5000 VGS, Gate-Source Voltage [V] Crss = Cgd 10 Capacitances [pF] 4000 Coss Ciss 8 3000 6 2000 * Note ; 1. VGS = 0 V 4 1000 Crss 2. f = 1 MHz 2 * Note : ID = 52A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDB52N20 Rev. A ℃ * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.04 ℃ 10 1 150 25 1.0 1.2 1.4 1.6 1.8 VDS = 40V VDS = 100V VDS = 160V www.fairchildsemi.com FDB52N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 3.0 Figure 8. On-Resistance Variation vs. Temperature 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 26 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 60 10 3 10 µs 10 2 ID, Drain Current [A] ID, Drain Current [A] 10 1 100 µs 1 ms 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 50 40 30 10 0 10 -1 * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 20 10 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [°C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 10 -2 * N o te s : 1 . Z θ J C (t) = 0 .3 5 ° C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 1 s in g le p u ls e PDM t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FDB52N20 Rev. A www.fairchildsemi.com FDB52N20 200V N-Channel MOSFET Gate Charge Test Circuit & Waveform 12V 200nF VGS 3mA VGS RG DUT 10V RG 10V tp FDB52N20 Rev. A Ω 300nF 50K Same Type as DUT VDS VGS Qg 10V Qgs Qgd DUT Charge Resistive Switching Test Circuit & Waveforms VDS RL VDD VDS 90% VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID VDD DUT VDD BVDSS IAS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD ID (t) VDS (t) tp Time 5 www.fairchildsemi.com FDB52N20 200V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FDB52N20 Rev. A www.fairchildsemi.com FDB52N20 200V N-Channel MOSFET Mechanical Dimensions D2-PAK 7 www.fairchildsemi.com FDB52N20 Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDB52N20 Rev. A 8 www.fairchildsemi.com