FDB6035AL

FDP6035AL/FDB6035AL July 2003 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 20 48 (Note 1) Units V V A W W/°C °C 180 52 0.3 –65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.9 62.5 °C/W Package Marking and Ordering Information Device Marking FDB6035AL FDP6035AL Device FDB6035AL FDP6035AL Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 ©2003 Fairchild Semiconductor Corporation FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL Electrical Characteristics Symbol EAS IAS TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VDD = 15 V, ID = 48 A Min Typ Max 58 48 Units mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ± 20 V, VGS = 0 V VDS = 0 V 30 23 1 ± 100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 20 A VGS= 10 V, ID = 24 A, TJ=125°C VGS = 10 V, VDS = 10 V VDS = 10V, ID = 24 A 1 1.9 –5 7.9 10.2 13.0 3 V mV/°C 12 14 21 mΩ A ID(on) gFS 60 68 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1250 330 155 pF pF pF Ω VGS = 15 mV, f = 1.0 MHz 1.3 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 12 29 12 20 22 46 21 18 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 48 A, 13 4.3 5.5 Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 24 A (Note 1) 60 0.92 26 15 1.3 A V nS nC IF = 24 A, diF/dt = 100 A/µs FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL Typical Characteristics 180 VGS = 10V 150 ID, DRAIN CURRENT (A) 5.0V 120 4.5V 90 4.0V 60 3.5V 30 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1.8 VGS = 3.5V 3.5V 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 1 10V 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.030 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 24A VGS =10V ID = 24A 0.025 1.6 1.4 0.020 TA = 125oC 0.015 TA = 25 C 0.010 o 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 175 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 90 VDS = 5V 75 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 VGS = 0V 100 60 10 TA = 125 C 25oC -55oC o 45 TA = 125oC 30 25oC 15 -55oC 1 0.1 0.01 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6035AL/FDB6035AL Rev D(W) FDP6035AL/FDB6035AL Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 2000 ID = 48A VDS = 10V 20V 1600 CAPACITANCE (pF) 15V f = 1MHz VGS = 0 V 8 Ciss 1200 6 4 800 Coss 400 2 Crss 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 5000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10µs 100µs 1mS 10mS 100mS 4000 SINGLE PULSE RθJC = 2.9°C/W TA = 25°C 100 3000 10 DC VGS = 10V SINGLE PULSE RθJC = 2.9oC/W TA = 25oC 2000 1000 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.9 °C/W P(pk t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDP6035AL/FDB6035AL Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. 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As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5