FDB8860

FDB8860 N-Channel Logic Level PowerTrench® MOSFET May 2008 FDB8860 N-Channel Logic Level PowerTrench® MOSFET tm 30V, 80A, 2.6mΩ Features RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications 12V Automotive Load Control Start / Alternator Systems Electronic Power Steering Systems ABS DC-DC Converters ©2008 Fairchild Semiconductor Corporation FDB8860 Rev A1 1 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V, TC < 163oC) ID Continuous (VGS = 5V, TC < 162oC) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power Dissipation Derate above 25oC Operating and Storage Temperature Continuous (VGS = 10V, TC = 25oC, with RθJA = 43oC/W) Ratings 30 ±20 80 80 31 Figure 4 947 254 1.7 -55 to +175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 0.59 62 43 oC/W o C/W oC/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V VDS = 24V VGS = 0V VGS = ±20V TJ = 150°C 30 1 250 ±100 V μA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA ID = 80A, VGS = 10V ID = 80A, VGS = 5V RDS(ON) Drain to Source On Resistance ID = 80A, VGS = 4.5V ID = 80A, VGS = 10V, TJ = 175°C 1 1.7 1.6 1.9 2.1 2.5 3 2.3 2.6 2.7 3.6 mΩ V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 80A Ig = 1.0mA 9460 1710 1050 1.8 165 89 9.1 26 18 33 12585 2275 1575 214 115 12 pF pF pF Ω nC nC nC nC nC nC FDB8860 Rev A1 2 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 15V, ID = 80A VGS = 5V, RGS = 1Ω 14 213 79 49 340 192 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 80A ISD = 40A ISD = 80A, dISD/dt = 100A/μs ISD = 80A, dISD/dt = 100A/μs 1.25 1.0 43 29 V V ns nC Notes: 1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8860 Rev A1 3 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 300 VGS = 10V 1.0 0.8 0.6 0.4 0.2 0.0 225 VGS = 5V CURRENT LIMITED BY PACKAGE 150 75 0 25 50 75 100 125 150 TC, CASE TEMPERATURE( oC) 175 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE ZθJA Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 3000 TC = 25oC I(PK), PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 1000 100 SINGLE PULSE 50 -5 10 10 -4 10 -3 10 t, PULSE WIDTH (s) -2 10 -1 10 0 10 1 Figure 4. Peak Current Capability FDB8860 Rev A1 4 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 10us 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT(A) 100 100us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 STARTING TJ = 25oC CURRENT LIMITED BY PACKAGE 1ms 10ms 10 STARTING TJ = 150oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE(V) 60 1 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 10000 Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 120 160 ID, DRAIN CURRENT (A) 120 VDD = 5V TJ = 175oC ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 4V VGS = 3V VGS = 5V VGS = 10V 100 80 60 40 20 0 0.0 80 TJ = 25oC TJ = -55oC 40 0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 ID = 40A 1.6 1.4 1.2 1.0 0.8 0.6 -80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 3.5 3.0 PULSE DURATION = 80μs DUTY CYCLE=0.5% MAX TJ = 175oC 2.5 2.0 1.5 3 TJ = 25oC ID = 80A VGS = 10V 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( OC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDB8860 Rev A1 5 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 1.10 ID = 1mA 1.05 1.0 0.8 0.6 0.4 0.2 -80 1.00 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 200 0.90 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE( oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 Ciss Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 10000 CAPACITANCE (pF) Coss 8 6 4 2 0 1000 500 0.1 f = 1MHz VGS = 0V Crss ID = 80A ID = 1A 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDB8860 Rev A1 6 www.fairchildsemi.com FDB8860 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDB8860 Rev A1 7 www.fairchildsemi.com