FDC3616N

FDC3616N January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (23nC typical) • High power and current handling capability • Fast switching speed. Applications • DC/DC converter • Load Switching Bottom Drain G S S S SuperSOT-6 TM 1 S 6 5 4 2 3 S FLMP Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 100 ± 20 (Note 1a) Units V V A W °C 3.7 20 2 1.1 −55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) 60 111 0.5 °C/W Package Marking and Ordering Information Device Marking .616 Device FDC3616N Reel Size 7’’ Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDC3616N Rev C1 (W) FDC3616N Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Single Pulse,VDD = 50 V, ID= 3.7A Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS IAR Drain-Source Avalanche Energy Drain-Source Avalanche Current 244 3.7 mJ A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA 100 114 10 1 100 –100 V mV/°C µA µA nA nA ID = 250 µA, Referenced to 25°C VDS = 80 V, VDS = 30 V, VGS = 20 V, VGS = 0 V VGS = 0 V VDS = 0 V VGS = –20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On Resistance Forward Transconductance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 3.7 A VGS = 6.0 V, ID = 3.5 A VGS = 10 V, ID = 3.7 A, TJ = 125°C VDS = 10 V, ID = 3.7 A 2 2.5 –7.4 55 58 104 19 4 V mV/°C 70 80 139 mΩ gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 50 V, f = 1.0 MHz V G S = 0 V, 1215 72 39 1.1 pF pF pF Ω VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 9 4 28 10 18 8 45 20 32 ns ns ns ns nC nC nC VDS = 50 V, VGS = 10 V ID = 3.7 A, 23 4.8 5.4 FDC3616N Rev C1 (W) FDC3616N Electrical Characteristics Symbol trr Qrr IS VSD Notes: TA = 25°C unless otherwise noted Parameter Diode Reverse Recovery Time Test Conditions Min Typ Max 41 107 2.1 Units nS nC A V Drain–Source Diode Characteristics and Maximum Ratings IF = 3.7 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge Maximum Continuous Drain–Source Diode Forward Current VGS = 0 V, IS = 2.1 A (Note 2) Drain–Source Diode Forward Voltage 0.75 1.2 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 60°C/W when 2 mounted on a 1in pad of 2 oz copper b) 111°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC3616N Rev C1 (W) FDC3616N Typical Characteristics 20 1.8 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 5.0V 4.0V 1.6 VGS = 4.0V 1.4 4.5V 5.0V 6.0V 10V ID, DRAIN CURRENT (A) 15 10 1.2 5 1 3.5V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.16 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 RDS(ON), ON-RESISTANCE (OHM) ID = 3.7 A VGS = 10V ID =1.85 A 0.14 TA = 125 C 0.12 0.1 0.08 o TA = 25 C 0.06 0.04 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 30 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 10V 25 ID, DRAIN CURRENT (A) 20 15 VGS = 0V 10 1 0.1 TA = 125oC 25oC -55oC TA = 125oC 10 0.01 0.001 0.0001 25oC 5 -55oC 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC3616N Rev C1 (W) FDC3616N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 1800 ID =3.7A VDS = 30V 70V 50V CAPACITANCE (pF) 8 1500 CISS 1200 900 600 300 0 CRSS 0 25 50 75 COSS f = 1MHz VGS = 0 V 6 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RθJA = 111oC/W TA = 25oC 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 1s 100µs 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RθJA = 111°C/W TA = 25°C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 R θJA (t) = r(t) * R θJA R θJA = 111 °C/W 0.1 0.1 0.05 0.02 P(pk) t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC3616N Rev C1 (W) FDC3616N Dimensional Outline and Pad Layout FDC3616N Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7