FDC365P_07

FDC365P P-Channel PowerTrench® MOSFET November 2007 FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Applications Inverter Power Supplies S D D D G D Pin 1 D SuperSOTTM -6 G 3 4 S 2 5 D D 1 6 D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -35 ±20 -4.3 -20 1.6 0.8 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 °C/W Package Marking and Ordering Information Device Marking .365P Device FDC365P Package SSOT6 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 1 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -28V, VGS = 0V VGS = ±20V, VDS = 0V -35 -26 -1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.2A VGS = -10V, ID = -4.2A, TJ = 125°C VDS = -10V, ID = -4.2A -1 -1.8 5.0 45 70 69 8.7 55 80 90 S mΩ -3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 530 105 55 6.1 705 135 80 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -20V, ID = -4.2A VDD = -20V, ID = -4.2A, VGS = -10V, RGEN = 6Ω 7 3 15 3 11 6 1.7 2.2 13 10 28 10 15 9 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.3A (Note 2) -0.8 16 7 -1.2 29 14 V ns nC IF = -4.2A, di/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156°C/W when mounted on minimum pad of 2 oz copper. a 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 2 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -4V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10V 4.0 3.5 3.0 VGS = -3.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -3V 16 12 8 VGS = -4.5V 2.5 VGS = -4V 2.0 1.5 1.0 VGS = -10V VGS = -4.5V VGS = -3.5V 4 VGS = -3V 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 4 8 12 -ID, DRAIN CURRENT(A) 16 20 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = - 4.2A VGS = -10V ID = -4.2A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 120 TJ = 125oC rDS(on), DRAIN TO 80 40 0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 20 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V 16 VDS = -5V 1 TJ = 150oC 12 8 TJ = 150oC 0.1 TJ = 25oC 4 TJ = 25oC 0.01 TJ = -55oC 0 1 2 TJ = -55oC 3 4 5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 3 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -4.2A 1000 8 VDD = -20V 6 VDD = -15V VDD = -25V 4 2 0 0 3 6 Qg, GATE CHARGE(nC) CAPACITANCE (pF) Ciss 100 f = 1MHz VGS = 0V Coss Crss 9 12 30 0.1 1 10 35 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 400 P(PK), PEAK TRANSIENT POWER (W) 30 -ID, DRAIN CURRENT (A) 10 0.1ms VGS = -10V SINGLE PULSE RθJA = 156 C/W TA = 25 C o o 100 1ms 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 10 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 156oC/W TA = 25oC 1s 10s DC 1 0.5 -4 10 0.01 0.1 1 10 100 10 -3 10 -2 10 -1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operating Area 2 Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RθJA = 156 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 4 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 5 www.fairchildsemi.com Preliminary Datasheet FDC365P P-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 6 www.fairchildsemi.com