FDC5612_04

FDC5612 December 2004 FDC5612 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.3 A, 60 V. RDS(ON) = 0.055 Ω • • • • @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V Low gate charge (12.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D D 1 6 2 5 G D SuperSOTTM -6 3 4 D TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed Parameter Ratings 60 ±20 (Note 1a) Units V V A W °C 4.3 20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Outlines and Ordering Information Device Marking .562 Device FDC5612 Reel Size 7’’ Tape Width 8mm Quantity 3000 units © 2004 Fairchild Semiconductor Corporation FDC5612 Rev. C2 FDC5612 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) 60 58 1 100 -100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A, TJ = 125°C VGS = 6 V, ID = 4 A VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 4.3 A 2 2.2 -5.5 0.042 0.072 0.048 4 V mV/°C 0.055 0.094 0.064 Ω ID(on) gFS 10 14 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 25 V, VGS = 0 V, f = 1.0 MHz 650 80 35 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 8 19 6 20 18 35 15 18 ns ns ns ns nC nC nC VDS = 30 V, ID = 4.3 A, VGS = 10 V 12.5 2.4 2.6 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 1.3 0.75 1.2 A V Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDC5612 Rev. C2 FDC5612 Typical Characteristics 20 ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 6.0V 16 5.0V 4.0V 12 4.5V R DS(O N), N OR M A LIZ ED D R AIN -SO U RC E O N -R ES ISTA NC 1 .8 1 .6 V G S = 4 .0 V 1 .4 4 .5 V 5 .0 V 1 .2 6 .0 V 8 .0 V 1 1 0V 8 3.5V 4 0 0 1 2 3 4 0 .8 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) I D , D RA IN C U RR EN T (A ) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.14 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 ID = 4.3A VGS = 10V ID = 2.2A 0.12 0.1 0.08 0.06 0.04 0.02 0 o TA = 125 C o TA = 25 C -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 25 C 125 C o 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o o VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C o o o ID, DRAIN CURRENT (A) 16 12 8 4 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC5612 Rev. C2 FDC5612 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 4.3A 8 VDS = 10V 20V 900 800 CISS f = 1 MHz VGS = 0 V CAPACITANCE (pF) 30V 6 700 600 500 400 300 200 100 COSS CRSS 4 2 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 0 0 10 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s 0.1 VGS = 10V SINGLE PULSE o RθJA = 156 C/W T A = 25 C 0.01 0.1 1 10 o 100µs 8 SINGLE PULSE RθJA = 156°C/W TA = 25°C 6 1 DC 4 2 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 156 C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC5612 Rev. C2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14