FDC5614

FDC5614P February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V Applications • DC-DC converters • Load switch • Power management • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –3 –20 1.6 0.8 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Marking and Ordering Information Device Marking .564 Device FDC5614P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDC5614P Rev C1 (W) FDC5614P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –48 V, VGS = 0 V VGS = 20V, VGS = –20 V VDS = 0 V VDS = 0 V Min –60 Typ Max Units V Off Characteristics –49 –1 100 –100 –1 –1.6 4 82 105 130 –20 8 105 135 190 –3 mV/°C µA nA nA V mV/°C mΩ A S On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C VGS = –10 V, ID = –3 A VGS = –4.5 V, ID = –2.7 A VGS = –10 V, ID = –3 A TJ=125°C VGS = –10 V, VDS = –5 V VDS = –5 V, ID = –3 A Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –30 V, f = 1.0 MHz V GS = 0 V, 759 90 39 7 10 19 12 14 20 34 22 24 pF pF pF ns ns ns ns nC nC nC –1.3 A V Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –30 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω VDS = –30V, VGS = –10 V ID = –3.0 A, 15 2.5 3.0 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. 156°C/W when mounted on a minimum pad. a. b. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC5614P Rev C1 (W) FDC5614P Typical Characteristics 15 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = -10V -6.0V 12 -5.0V -4.5V -4.0V -3.5V 1.6 VGS = -3.5V -4.0V -4.5V -5.0V 9 1.4 6 1.2 -3.0V -6.0V -7.0V -8.0V 3 -2.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 -10V 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 1.8 1.6 1.4 1.2 ID = -3.0A VGS = -10V ID = -1.5A 0.3 TA = 125 C 0.2 o 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o 0.1 TA = 25 C 0 125 150 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 15 VDS = -5V 12 125 C 9 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C o 25 C 10 o VGS = 0V TA = 125 C 25 C -55 C o o o 1 6 0.1 3 0.01 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC5614P Rev C1 (W) FDC5614P Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 8 VDS = -10V -20V -30V 1200 1000 800 600 f = 1 MHz VGS = 0 V 6 CISS 4 400 2 200 CRSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0 10 20 30 40 50 60 -VDS, DRAIN TO SOURCE VOLTAGE (V) COSS Figure 7. Gate Charge Characteristics. 100 40 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 10ms 100ms 100µs 30 SINGLE PULSE RθJA = 156°C/W TA = 25°C 1 VGS = -10V SINGLE PULSE RθJA = 156 C/W TA = 25 C 0.01 0.1 1 10 o o 1s 10s DC 20 0.1 10 0 100 0.1 1 10 t1, TIME (sec) 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) + RθJA RθJA = 156°C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDC5614P Rev C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4