FDC634P

FDC634P September 2001 FDC634P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –3.5 A, –20 V. RDS(ON) = 80 mΩ @ V GS = –4.5 V RDS(ON) = 110 mΩ @ V GS = –2.5 V • Low gate charge (7.2 nC typical) • High performance trench technology for extremely low RDS(ON) Applications • Battery management • Load switch • Battery protection D D S 1 2 G 6 5 4 SuperSOT -6 TM D D 3 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 (Note 1a) Units V V A W °C ±8 –3.5 –20 1.6 0.8 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Marking and Ordering Information Device Marking .634 Device FDC634P Reel Size 7’’ Tape width 8mm Quantity 3000 units © 2001 Fairchild Semiconductor Corporation FDC634P Rev E (W) FDC634P Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C V DS = –16 V, V GS = 0 V V GS = 8 V, V GS = –8 V V DS = 0 V V DS = 0 V Min –20 Typ Max Units V Off Characteristics –12 –1 100 –100 mV/°C µA nA nA On Characteristics V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS V GS V GS V GS = –4.5 V, ID = –3.5 A = –2.5 V, ID = –3.1 A = –4.5 V, ID = –3.5A,TJ =125°C = –4.5 V, V DS = –5 V ID = –3.5 A –0.4 –0.8 3 60 82 77 –1.5 V mV/°C 80 110 130 mΩ ID(on) gFS –10 11 A S V DS = –5 V, Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = –10 V, f = 1.0 MHz V GS = 0 V, 779 121 56 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS V SD Notes: Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge V DD = –10 V, V GS = –4.5 V, ID = –1 A, RGEN = 6 Ω 10 9 27 11 20 19 43 20 10 ns ns ns ns nC nC nC V DS = –10 V, V GS = –4.5 V ID = –3.5 A, 7.2 1.7 1.5 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage V GS = 0 V, IS = –1.3 A (Note 2) –1.3 –0.8 –1.2 A V 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1in2 pad of 2 oz copper b) 156°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% FDC634P Rev E(W) FDC634P Typical Characteristics 15 V GS = -4.5V -3.5V 12 -ID, DRAIN CURRENT (A) -3.0V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE -2.5V V 1.8 V GS=-2.0V 2 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.5V 9 -2.0V 6 3 -1.5V 0 0 1 2 3 4 -V DS , DRAIN TO SOURCE VOLTAGE (V) 0 3 6 9 12 15 -ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON) ON-RESISTANCE (OHM) , 1.4 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( oC) ID = -3.5A V GS = -4.5V ID = -1.8A 0.18 0.14 T A = 125o C 0.1 TA = 25 oC 0.06 0.02 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 -IS , REVERSE DRAIN CURRENT (A) V DS = - 5V 8 -ID, DRAIN CURRENT (A) 125oC 6 T A = -55oC 25o C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 V GS = 0V 1 T A = 125o C 0.1 25oC 0.01 -55 o C 0.001 4 2 0 0.5 1 1.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC634P Rev E(W) FDC634P Typical Characteristics 5 -V GS, GATE-SOURCE VOLTAGE (V) ID = -3.5A 4 CAPACITANCE (pF) -15V 3 V DS = - 5V -10V 800 1000 CISS f = 1 MHz V GS = 0 V 600 2 400 COSS 200 CRSS 0 5 10 15 20 1 0 0 1 2 3 4 5 6 7 8 9 Q g, GATE CHARGE (nC) 0 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -I D, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100µ s 1ms 10ms 100ms 1s 8 SINGLE PULSE RθJA = 156°C/W TA = 25°C 6 1 V GS = - 10V SINGLE PULSE RθJA = 1 56 o C/W T A = 2 5oC 0.01 0.1 1 DC 4 0.1 2 10 100 0 0.01 0.1 1 t 1, TIME (sec) 10 100 -V D S, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) + RθJA RθJA = 156 C/W P(pk) t1 t2 T J - TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC634P Rev E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4